Datasheet SiSS94DN (Vishay) - 5
| 制造商 | Vishay |
| 描述 | N-Channel 200 V (D-S) MOSFET |
| 页数 / 页 | 7 / 5 — SiSS94DN. TYPICAL CHARACTERISTICS. Current Derating a. Power, … |
| 文件格式/大小 | PDF / 195 Kb |
| 文件语言 | 英语 |
SiSS94DN. TYPICAL CHARACTERISTICS. Current Derating a. Power, Junction-to-Ambient. Power, Junction-to-Case. Note
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SiSS94DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 24 10000 18 ) 1000 rrent (A ne ne ine u 12 C n 1st li 2nd li 2nd l rai D 100 - I D 6 0 10 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating a
Axis Title Axis Title 2.5 10000 80 10000 2.0 64 1000 ) 1000 ) 1.5 48 ne ne ne r (W ne er (W ne ne e w ow 1st li o P 2nd li 2nd li 1st li P 2nd li 1.0 2nd li - 32 P 100 P - 100 0.5 16 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Ambient Temperature (°C) T - Case Temperature (°C) A C
Power, Junction-to-Ambient Power, Junction-to-Case Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0849-Rev. A, 07-Oct-2019
5
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 24 10000 18 ) 1000 rrent (A ne ne ine u 12 C n 1st li 2nd li 2nd l rai D 100 - I D 6 0 10 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating a
Axis Title Axis Title 2.5 10000 80 10000 2.0 64 1000 ) 1000 ) 1.5 48 ne ne ne r (W ne er (W ne ne e w ow 1st li o P 2nd li 2nd li 1st li P 2nd li 1.0 2nd li - 32 P 100 P - 100 0.5 16 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Ambient Temperature (°C) T - Case Temperature (°C) A C
Power, Junction-to-Ambient Power, Junction-to-Case Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0849-Rev. A, 07-Oct-2019
5
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000