Datasheet J175, J176, MMBFJ175, MMBFJ176, MMBFJ177 (ON Semiconductor) - 2

J 175 / J176 / MMBF Absolute Maximum Ratings
(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VDG Drain-Gate Voltage -30 V
J175 / MMBFJ1
VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
76 / MMBFJ177 —
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max. P-Channe Symbol Parameter MMBFJ175 / Unit J175 / J176
(3)
MMBFJ176 / MMBFJ177
(3) Total Device Dissipation 350 225 mW PD Derate Above 25°C 2.8 1.8 mW/°C
l Switch
RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2