Datasheet ADA4800 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Power, High Speed CCD Buffer Amplifier |
| 页数 / 页 | 16 / 3 — ADA4800. SPECIFICATIONS BUFFER ELECTRICAL CHARACTERISTICS. Table 1. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 220 Kb |
| 文件语言 | 英语 |
ADA4800. SPECIFICATIONS BUFFER ELECTRICAL CHARACTERISTICS. Table 1. Parameter Condition Min. Typ. Max. Unit
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ADA4800 SPECIFICATIONS BUFFER ELECTRICAL CHARACTERISTICS
TA = 25°C, VCC = 15 V, VEE = 0 V, RIDRV = 249 kΩ connected to VIDRV, RLOAD = 1 kΩ in parallel with 22 pF in series with 10 Ω, VIN = 7.5 V, unless otherwise noted (see Figure 2 for a test circuit).
Table 1. Parameter Condition Min Typ Max Unit
GAIN Voltage Gain VIN = 6.5 V to 8.5 V, RISF = 0 Ω 0.995 0.998 1.005 V/V INPUT/OUTPUT CHARACTERISTICS I/O Offset Voltage 30 41 mV IDRV Current RIDRV = 249 kΩ, VIDRV = 15 V 52 59 μA Input/Output Voltage Range VEE + 1.4 VCC − 1.4 V Input Bias Current (IBUFF) 1 μA DYNAMIC PERFORMANCE −3 dB Bandwidth RIDRV = 300 kΩ (ICC = 1.1 mA), VOUT = 0.1 V p-p 182 MHz RIDRV = 150 kΩ (ICC = 2.1 mA), VOUT = 0.1 V p-p 288 MHz RIDRV = 50 kΩ (ICC = 4.7 mA), VOUT = 0.1 V p-p 400 MHz Slew Rate VOUT = 2 V step 415 V/μs Rise Time VIN = 7.5 V to 8.5 V, 10% to 90% 2.2 ns Fall Time VIN = 8.5 V to 7.5 V, 10% to 90% 1.8 ns 1% Settling Time VIN = 9.5 V to 7.5 V (falling edge) 5 ns VIN = 7.5 V to 9.5 V (rising edge) 4.5 ns VIN = 8.5 V to 7.5 V (falling edge) 4.5 ns VIN = 7.5 V to 8.5 V (rising edge) 4 ns I/O Delay Time VIN = 8.5 V to 7.5 V (falling edge) 0.4 ns VIN = 7.5 V to 8.5 V (rising edge) 0.35 ns Output Voltage Noise @ 20 MHz 1.5 nV/√Hz POWER SUPPLY Supply Voltage Range 4 15 17 V Supply Current (ICC) 1.4 1.8 mA OPERATING TEMPERATURE RANGE −40 +85 °C
ACTIVE CURRENT LOAD ELECTRICAL CHARACTERISTICS
TA = 25°C, VEE = 0 V, VISF = 3 V, RISF = 10 kΩ connected to VISF, VIN = 7.5 V, unless otherwise noted (see Figure 2 for a test circuit).
Table 2. Parameter Condition Min Typ Max Unit
INPUT/OUTPUT CHARACTERISTICS Active Load Current (IAL) VISF = 0 V 1 μA VISF = 3 V 3 mA VISF = 7.5 V 12.7 mA ISF Current (IISF) RISF = 10 kΩ 111 120 μA Input Voltage Range VEE + 1.7 VCC V OPERATING TEMPERATURE RANGE −40 +85 °C Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS BUFFER ELECTRICAL CHARACTERISTICS ACTIVE CURRENT LOAD ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUIT THEORY OF OPERATION SETTING ACTIVE LOAD CURRENT WITH PIN 6 (ISF) SETTING BANDWIDTH WITH PIN 4 (IDRV) APPLICATIONS INFORMATION OPEN SOURCE CCD OUTPUT BUFFER POWER SAVE MODE POWER SUPPLY BYPASSING POWER SEQUENCING OUTLINE DIMENSIONS ORDERING GUIDE
ADA4800 SPECIFICATIONS BUFFER ELECTRICAL CHARACTERISTICS
TA = 25°C, VCC = 15 V, VEE = 0 V, RIDRV = 249 kΩ connected to VIDRV, RLOAD = 1 kΩ in parallel with 22 pF in series with 10 Ω, VIN = 7.5 V, unless otherwise noted (see Figure 2 for a test circuit).
Table 1. Parameter Condition Min Typ Max Unit
GAIN Voltage Gain VIN = 6.5 V to 8.5 V, RISF = 0 Ω 0.995 0.998 1.005 V/V INPUT/OUTPUT CHARACTERISTICS I/O Offset Voltage 30 41 mV IDRV Current RIDRV = 249 kΩ, VIDRV = 15 V 52 59 μA Input/Output Voltage Range VEE + 1.4 VCC − 1.4 V Input Bias Current (IBUFF) 1 μA DYNAMIC PERFORMANCE −3 dB Bandwidth RIDRV = 300 kΩ (ICC = 1.1 mA), VOUT = 0.1 V p-p 182 MHz RIDRV = 150 kΩ (ICC = 2.1 mA), VOUT = 0.1 V p-p 288 MHz RIDRV = 50 kΩ (ICC = 4.7 mA), VOUT = 0.1 V p-p 400 MHz Slew Rate VOUT = 2 V step 415 V/μs Rise Time VIN = 7.5 V to 8.5 V, 10% to 90% 2.2 ns Fall Time VIN = 8.5 V to 7.5 V, 10% to 90% 1.8 ns 1% Settling Time VIN = 9.5 V to 7.5 V (falling edge) 5 ns VIN = 7.5 V to 9.5 V (rising edge) 4.5 ns VIN = 8.5 V to 7.5 V (falling edge) 4.5 ns VIN = 7.5 V to 8.5 V (rising edge) 4 ns I/O Delay Time VIN = 8.5 V to 7.5 V (falling edge) 0.4 ns VIN = 7.5 V to 8.5 V (rising edge) 0.35 ns Output Voltage Noise @ 20 MHz 1.5 nV/√Hz POWER SUPPLY Supply Voltage Range 4 15 17 V Supply Current (ICC) 1.4 1.8 mA OPERATING TEMPERATURE RANGE −40 +85 °C
ACTIVE CURRENT LOAD ELECTRICAL CHARACTERISTICS
TA = 25°C, VEE = 0 V, VISF = 3 V, RISF = 10 kΩ connected to VISF, VIN = 7.5 V, unless otherwise noted (see Figure 2 for a test circuit).
Table 2. Parameter Condition Min Typ Max Unit
INPUT/OUTPUT CHARACTERISTICS Active Load Current (IAL) VISF = 0 V 1 μA VISF = 3 V 3 mA VISF = 7.5 V 12.7 mA ISF Current (IISF) RISF = 10 kΩ 111 120 μA Input Voltage Range VEE + 1.7 VCC V OPERATING TEMPERATURE RANGE −40 +85 °C Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS BUFFER ELECTRICAL CHARACTERISTICS ACTIVE CURRENT LOAD ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUIT THEORY OF OPERATION SETTING ACTIVE LOAD CURRENT WITH PIN 6 (ISF) SETTING BANDWIDTH WITH PIN 4 (IDRV) APPLICATIONS INFORMATION OPEN SOURCE CCD OUTPUT BUFFER POWER SAVE MODE POWER SUPPLY BYPASSING POWER SEQUENCING OUTLINE DIMENSIONS ORDERING GUIDE