Datasheet BLP2425M10S250P (Ampleon) - 8

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BLP2425M10S250P Power LDMOS transistor 9. Handling information CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
Table 10. ESD sensitivity ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C1 [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1C [2] [1] CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V. [2] HBM classification 1C is granted to any part that passes after exposure to an ESD pulse of 1000 V.
10. Abbreviations Table 11. Abbreviations Acronym Description
CW Continuous Wave ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure RoHS Restriction of Hazardous Substances VSWR Voltage Standing Wave Ratio
11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes
BLP2425M10S250P v.1 20200326 Product data sheet - - BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 8 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents