Datasheet 6ED2230S12T (Infineon) - 9

制造商Infineon
描述1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP
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6ED2230S12T. 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP. Electrical characteristics. Table 4

6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Electrical characteristics Table 4

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6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Electrical characteristics Table 4 Static electrical characteristics (continued)
(VCC - COM) = (VB - VS) = 15 V. TA = 25 °C unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max.
Mean output current IO- mean 400 600 — mA C = 22 nF for load capacity discharging from 10.5 V (70%) to 7.5 V (50%) Output high short circuit pulsed IO+ — 350 — mA VO = 0 V current PW ≤ 1 µs Output low short circuit pulsed IO- — 650 — mA VO = 15 V current PW ≤ 1 µs Logic “1” Input bias current (RFE) IRFE+ — 0 1 µA VRFE = 3.3 V Logic “0” Input bias current (RFE) IRFE- 1 0 — µA VRFE = 0 V Logic “1” Input bias current (LIN, IIN+ — 1000 1250 µA VIN = 5 V HIN) Logic “0” Input bias current (LIN, IIN- — — 1 µA VIN = 0 V HIN) Logic “1” Input bias current (ITRIP) IITRIP+ — 15 25 µA VIN = 1 V Logic “0” Input bias current (ITRIP) IITRIP- — — 1 µA VIN = 0 V Bootstrap diode on resistance RBS — 120 150 Ω — Bootstrap diode forward voltage VFBSD — 0.9 — V Io = 0.3 mA drop RFE mos resistance RON, RFE — 40 60 Ω — Please refer to Application Section for integrated bootstrap diode description.
5.2 Dynamic electrical characteristics Table 5 Dynamic electrical characteristics
VCC = VB = 15 V, VS = COM, TA = 25 oC, and CL = 1000 pF unless otherwise specified.
Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max.
Turn-on propagation delay tON 500 700 900 ns Turn-off propagation delay tOFF 450 650 850 ns Turn-on rise time tR — 35 — ns Datasheet 9 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4