Datasheet H11AV1M, H11AV1AM, H11AV2M, H11AV2AM (Fairchild) - 2
| 制造商 | Fairchild |
| 描述 | Phototransistor Optocouplers |
| 页数 / 页 | 10 / 2 — H11A. Absolute Maximum Ratings. V1M,. Symbol. Parameter. Value. Units. … |
| 文件格式/大小 | PDF / 251 Kb |
| 文件语言 | 英语 |
H11A. Absolute Maximum Ratings. V1M,. Symbol. Parameter. Value. Units. V1AM,. TOTAL DEVICE. V2M,. EMITTER. V2AM — Phototransistor Optocoupler
该数据表的模型线
文件文字版本
H11A Absolute Maximum Ratings
(TA = 25°C unless otherwise specified.)
V1M,
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
H11A
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units V1AM, TOTAL DEVICE
TSTG Storage Temperature -40 to +150 °C
H11A
TOPR Operating Temperature -40 to +100 °C TSOL Wave Solder Temperature (see page 8 for reflow solder profiles) 260 for 10 sec °C
V2M,
PD Total Device Power Dissipation @ TA = 25°C 250 mW Derate above 25°C 2.94 mW/°C
H11A EMITTER
IF DC / Average Forward Input Current 60 mA
V2AM — Phototransistor Optocoupler
VR Reverse Input Voltage 6 V PD LED Power Dissipation @ TA = 25°C 120 mW Derate above 25°C 1.41 mW/°C
DETECTOR
VCEO Collector-Emitter Voltage 70 V VCBO Collector-Base Voltage 70 V VECO Emitter-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate above 25°C 1.76 mW/°C
s
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 2
(TA = 25°C unless otherwise specified.)
V1M,
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
H11A
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units V1AM, TOTAL DEVICE
TSTG Storage Temperature -40 to +150 °C
H11A
TOPR Operating Temperature -40 to +100 °C TSOL Wave Solder Temperature (see page 8 for reflow solder profiles) 260 for 10 sec °C
V2M,
PD Total Device Power Dissipation @ TA = 25°C 250 mW Derate above 25°C 2.94 mW/°C
H11A EMITTER
IF DC / Average Forward Input Current 60 mA
V2AM — Phototransistor Optocoupler
VR Reverse Input Voltage 6 V PD LED Power Dissipation @ TA = 25°C 120 mW Derate above 25°C 1.41 mW/°C
DETECTOR
VCEO Collector-Emitter Voltage 70 V VCBO Collector-Base Voltage 70 V VECO Emitter-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate above 25°C 1.76 mW/°C
s
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 2