Datasheet IRG4PH40UD2-EP (Infineon) - 6
| 制造商 | Infineon |
| 描述 | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| 页数 / 页 | 11 / 6 — Fig. 11 -. Fig. 12. Fig. 13 |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 242 Kb |
| 文件语言 | 英语 |
Fig. 11 -. Fig. 12. Fig. 13
该数据表的模型线
文件文字版本
IRG4PH40UD2-EP 16 1000 V = 20V GE RG = 10Ω T = 125 C o J 14 TJ = 150°C ) J VCE= 800V m( 12 V s GE = 15V e 100 s s o 10 L itter Current (A) g ni h 8 ci w S l 10 a 6 t o T 4 I , Collector-to-Em C SAFE OPERATING AREA 2 1 0 10 20 30 40 50 1 10 100 1000 10000 V , Collector-to-Emitter Voltage (V) I CE C, Collecto-to-Emitter (A)
Fig. 11 -
Typical Switching Losses vs.
Fig. 12
- Turn-Off SOA Collector-to-Emitter Current
Fig. 13
- Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
Fig. 11 -
Typical Switching Losses vs.
Fig. 12
- Turn-Off SOA Collector-to-Emitter Current
Fig. 13
- Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com