Datasheet IRG4PH40UD (International Rectifier) - 5
| 制造商 | International Rectifier |
| 描述 | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| 页数 / 页 | 11 / 5 — Fig. 7 -. Fig. 8. Fig. 9. Fig. 10 |
| 文件格式/大小 | PDF / 347 Kb |
| 文件语言 | 英语 |
Fig. 7 -. Fig. 8. Fig. 9. Fig. 10
该数据表的模型线
文件文字版本
IRG4PH40UD 4000 20 V = 0V, f = 1MHz GE VCC = 400V C = C + C C SHORTED ies ge gc , ce I C = 21A C = C res gc C = C + C oes ce gc 16 3000 12 Cies 2000 8 C, Capacitance (pF) C 1000 oes 4 GE Cres V , Gate-to-Emitter Voltage (V) 0 0 1 10 100 0 20 40 60 80 100 V , Collector-to-Emitter Voltage (V) CE Q , Total Gate Charge (nC) G
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5.0 100 V = 800V CC R = G Oh 10 m Ω V = GE 15V V = GE 15V T = J 25 C ° V = 800V CC J) I = C 21A J) m 4.5 m I = C A 42 4.0 ng Losses ( 10 ng Losses ( I = C A 21 itchi itchi w w I = C A 10.5 al S 3.5 al S Tot Tot 3.0 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , G R ate Resistance (Ohm) G T , Junction Temperature ( C ) G , Gate Resistance ( Ω ) J °
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5.0 100 V = 800V CC R = G Oh 10 m Ω V = GE 15V V = GE 15V T = J 25 C ° V = 800V CC J) I = C 21A J) m 4.5 m I = C A 42 4.0 ng Losses ( 10 ng Losses ( I = C A 21 itchi itchi w w I = C A 10.5 al S 3.5 al S Tot Tot 3.0 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , G R ate Resistance (Ohm) G T , Junction Temperature ( C ) G , Gate Resistance ( Ω ) J °
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5