Datasheet IRF6665PbF, IRF6665TRPbF (Infineon)
| 制造商 | Infineon |
| 描述 | Digital Audio MOSFET |
| 页数 / 页 | 10 / 1 — DIGITAL AUDIO MOSFET. Key Parameters. Features. Description. Absolute … |
| 文件格式/大小 | PDF / 239 Kb |
| 文件语言 | 英语 |
DIGITAL AUDIO MOSFET. Key Parameters. Features. Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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文件文字版本
PD - 97230A IRF6665PbF
DIGITAL AUDIO MOSFET
IRF6665TRPbF
Key Parameters Features
• V Latest MOSFET Silicon technology DS 100 V • Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m: applications • Low R Q DS(on) for improved efficiency g typ. 8.7 nC • Low Qg for better THD and improved efficiency RG(int) typ. 1.9 • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 100W per channel into 8Ω with no heatsink • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) DirectFET
ISOMETRIC
SH
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST
SH
MQ MX MT MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6665PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.2 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.4 IDM Pulsed Drain Current c 34 PD @TC = 25°C Maximum Power Dissipation 42 W PD @TA = 25°C Power Dissipation e 2.2 PD @TA = 70°C Power Dissipation e 1.4 Linear Derating Factor 0.017 W/°C TJ Operating Junction and -40 to + 150 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Ambient ek ––– 58 °C/W RθJA Junction-to-Ambient hk 12.5 ––– RθJA Junction-to-Ambient ik 20 ––– RθJC Junction-to-Case jk ––– 3.0 RθJ-PCB Junction-to-PCB Mounted 1.4 ––– Notes through are on page 2 www.irf.com 1 08/25/06
DIGITAL AUDIO MOSFET
IRF6665TRPbF
Key Parameters Features
• V Latest MOSFET Silicon technology DS 100 V • Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m: applications • Low R Q DS(on) for improved efficiency g typ. 8.7 nC • Low Qg for better THD and improved efficiency RG(int) typ. 1.9 • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 100W per channel into 8Ω with no heatsink • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) DirectFET
ISOMETRIC
SH
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST
SH
MQ MX MT MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6665PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.2 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.4 IDM Pulsed Drain Current c 34 PD @TC = 25°C Maximum Power Dissipation 42 W PD @TA = 25°C Power Dissipation e 2.2 PD @TA = 70°C Power Dissipation e 1.4 Linear Derating Factor 0.017 W/°C TJ Operating Junction and -40 to + 150 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Ambient ek ––– 58 °C/W RθJA Junction-to-Ambient hk 12.5 ––– RθJA Junction-to-Ambient ik 20 ––– RθJC Junction-to-Case jk ––– 3.0 RθJ-PCB Junction-to-PCB Mounted 1.4 ––– Notes through are on page 2 www.irf.com 1 08/25/06