Datasheet AUIRL7732S2TR (Infineon) - 7
| 制造商 | Infineon |
| 描述 | Automotive Grade. Automotive DirectFET Power MOSFET |
| 页数 / 页 | 11 / 7 — Notes on Repetitive Avalanche Curves , Figures 16, 17:. (For further … |
| 文件格式/大小 | PDF / 437 Kb |
| 文件语言 | 英语 |
Notes on Repetitive Avalanche Curves , Figures 16, 17:. (For further info, see AN-1005 at www.infineon.com)
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文件文字版本
AUIRL7732S2TR 30
Notes on Repetitive Avalanche Curves , Figures 16, 17:
TOP Single Pulse
(For further info, see AN-1005 at www.infineon.com)
BOTTOM 1.0% Duty Cycle 25 1. Avalanche failures assumption: )J ID = 35A Purely a thermal phenomenon and failure occurs at a temperature far in m( y excess of Tjmax. This is validated for every part type. gr 20 e 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. n E 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. eh 15 4. PD (ave) = Average power dissipation per single avalanche pulse. cna 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase lav during avalanche). A 10 , 6. Iav = Allowable avalanche current. R A 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as E 5 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f 0 ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) =
T/ ZthJC Iav = 2
T/ [1.3·BV·Zth] Fig 17.
Maximum Avalanche Energy vs. Temperature
EAS (AR) = PD (ave)·tav Fig 18a.
Unclamped Inductive Test Circuit
Fig 18b.
Unclamped Inductive Waveforms VDD
Fig 19a.
Gate Charge Test Circuit
Fig 19b.
Gate Charge Waveform
Fig 20a.
Switching Time Test Circuit
Fig 20b.
Switching Time Waveforms 7 2015-12-11
Notes on Repetitive Avalanche Curves , Figures 16, 17:
TOP Single Pulse
(For further info, see AN-1005 at www.infineon.com)
BOTTOM 1.0% Duty Cycle 25 1. Avalanche failures assumption: )J ID = 35A Purely a thermal phenomenon and failure occurs at a temperature far in m( y excess of Tjmax. This is validated for every part type. gr 20 e 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. n E 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. eh 15 4. PD (ave) = Average power dissipation per single avalanche pulse. cna 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase lav during avalanche). A 10 , 6. Iav = Allowable avalanche current. R A 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as E 5 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f 0 ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) =
T/ ZthJC Iav = 2
T/ [1.3·BV·Zth] Fig 17.
Maximum Avalanche Energy vs. Temperature
EAS (AR) = PD (ave)·tav Fig 18a.
Unclamped Inductive Test Circuit
Fig 18b.
Unclamped Inductive Waveforms VDD
Fig 19a.
Gate Charge Test Circuit
Fig 19b.
Gate Charge Waveform
Fig 20a.
Switching Time Test Circuit
Fig 20b.
Switching Time Waveforms 7 2015-12-11