Datasheet SQJ211ELP (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Automotive P-Channel 100 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 9 / 2 — SQJ211ELP. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. … |
| 文件格式/大小 | PDF / 247 Kb |
| 文件语言 | 英语 |
SQJ211ELP. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic b
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SQJ211ELP
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0, ID = -250 μA -100 - - V Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VGS = 0 V VDS = -100 V - - -10 Zero gate voltage drain current IDSS VGS = 0 V VDS = -100 V, TJ = 125 °C - - -50 μA VGS = 0 V VDS = -100 V, TJ = 175 °C - - -250 On-state drain current a ID(on) VGS = -10 V VDS -5 V -15 - - A VGS = -10 V ID = -8 A - 0.0242 0.0300 VGS = -10 V ID = -8 A, TJ = 125 °C - - 0.0269 Drain-source on-state resistance a R DS(on) VGS = -10 V ID = -8 A, TJ = 175 °C - - 0.0322 VGS = -4.5 V ID = -6 A - 0.0357 0.0435 Forward transconductance b gfs VDS = -15 V, ID = -8 A - 20 - S
Dynamic b
Input capacitance Ciss - 2713 3800 Output capacitance Coss VGS = 0 V VDS = -25 V, f = 1 MHz - 1193 1700 pF Reverse transfer capacitance Crss - 57 80 Total gate charge c Qg - 45 68 Gate-source charge c Qgs VGS = -10 V VDS = -50 V, ID = -5 A - 9.2 - nC Gate-drain charge c Qgd - 8.7 - Gate resistance Rg f = 1 MHz 1.0 2.1 3.2 Turn-on delay time c td(on) - 14 25 Rise time c tr V - 4 10 DD = -50 V, RL = 10 , ns I Turn-off delay time c t D -5 A, VGEN = -10 V, Rg = 1 d(off) - 37 60 Fall time c tf - 12 20
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM - - -100 A Forward voltage VSD IF = -8 A, VGS = 0 - -0.822 -1.2 V Body diode reverse recovery time trr - 59 120 ns Body diode reverse recovery charge Qrr - 149 300 nC IF = -5 A, di/dt = 100 A/μs Reverse recovery fall time ta - 43 - ns Reverse recovery rise time tb - 16 - Body diode peak reverse recovery I current RM(REC) - -5.1 - A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0536-Rev. A, 13-Jul-2020
2
Document Number: 77502 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0, ID = -250 μA -100 - - V Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VGS = 0 V VDS = -100 V - - -10 Zero gate voltage drain current IDSS VGS = 0 V VDS = -100 V, TJ = 125 °C - - -50 μA VGS = 0 V VDS = -100 V, TJ = 175 °C - - -250 On-state drain current a ID(on) VGS = -10 V VDS -5 V -15 - - A VGS = -10 V ID = -8 A - 0.0242 0.0300 VGS = -10 V ID = -8 A, TJ = 125 °C - - 0.0269 Drain-source on-state resistance a R DS(on) VGS = -10 V ID = -8 A, TJ = 175 °C - - 0.0322 VGS = -4.5 V ID = -6 A - 0.0357 0.0435 Forward transconductance b gfs VDS = -15 V, ID = -8 A - 20 - S
Dynamic b
Input capacitance Ciss - 2713 3800 Output capacitance Coss VGS = 0 V VDS = -25 V, f = 1 MHz - 1193 1700 pF Reverse transfer capacitance Crss - 57 80 Total gate charge c Qg - 45 68 Gate-source charge c Qgs VGS = -10 V VDS = -50 V, ID = -5 A - 9.2 - nC Gate-drain charge c Qgd - 8.7 - Gate resistance Rg f = 1 MHz 1.0 2.1 3.2 Turn-on delay time c td(on) - 14 25 Rise time c tr V - 4 10 DD = -50 V, RL = 10 , ns I Turn-off delay time c t D -5 A, VGEN = -10 V, Rg = 1 d(off) - 37 60 Fall time c tf - 12 20
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM - - -100 A Forward voltage VSD IF = -8 A, VGS = 0 - -0.822 -1.2 V Body diode reverse recovery time trr - 59 120 ns Body diode reverse recovery charge Qrr - 149 300 nC IF = -5 A, di/dt = 100 A/μs Reverse recovery fall time ta - 43 - ns Reverse recovery rise time tb - 16 - Body diode peak reverse recovery I current RM(REC) - -5.1 - A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0536-Rev. A, 13-Jul-2020
2
Document Number: 77502 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000