Datasheet SQJ211ELP (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Automotive P-Channel 100 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 9 / 3 — SQJ211ELP. TYPICAL CHARACTERISTICS. Output Characteristics. … |
| 文件格式/大小 | PDF / 247 Kb |
| 文件语言 | 英语 |
SQJ211ELP. TYPICAL CHARACTERISTICS. Output Characteristics. Transconductance. On-Resistance vs. Drain Current. Capacitance
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SQJ211ELP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title 100 10000 50 V = 10 V thru 6 V GS 80 ) 40 T = -55 °C C T = 25 °C C ) 1000 60 30 rrent (A ne ine u line ine C V = 5 V T = 125 °C C n GS 1st li 2nd 2nd l 40 2nd l rai 20 D 100 - ransconductance (S T I D V = 4 V GS - 20 fsg 10 V = 3 V GS 0 10 0 0 2 4 6 8 10 0 5 10 15 20 25 30 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Output Characteristics Transconductance
Axis Title Axis Title 0.10 10000 10 000 10000 ) Ω 0.08 Ciss 1000 1000 (pF) 1000 0.06 ine Coss V = 4.5 V GS ne ne ine ne tance 100 2nd l n-Resistance ( O 1st li 2nd li 2nd l - 1st li 0.04 apaci ) n C 100 100 DS(o C - R 10 C 0.02 rss V = 10 V GS 0 10 1 10 0 5 10 15 20 25 30 0 20 40 60 80 100 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
Axis Title Axis Title 50 10000 10 10000 ) I = 5 A D 40 (V 8 V = 50 V DS ) 1000 ltage 1000 o 30 6 rrent (A ine u ne ne ne ne ine C n ource V 1st li 2nd l 2nd li 1st li 2nd li rai 20 2nd l 4 D T = 25 °C - C 100 100 I D ate-to-S G 10 - 2 GS T = 125 °C V C T = -55 °C C 0 10 0 10 0 2 4 6 8 10 0 10 20 30 40 50 V - Gate-to-Source Voltage (V) Q - Total Gate Charge (nC) GS g
Transfer Characteristics Gate Charge
S20-0536-Rev. A, 13-Jul-2020
3
Document Number: 77502 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title 100 10000 50 V = 10 V thru 6 V GS 80 ) 40 T = -55 °C C T = 25 °C C ) 1000 60 30 rrent (A ne ine u line ine C V = 5 V T = 125 °C C n GS 1st li 2nd 2nd l 40 2nd l rai 20 D 100 - ransconductance (S T I D V = 4 V GS - 20 fsg 10 V = 3 V GS 0 10 0 0 2 4 6 8 10 0 5 10 15 20 25 30 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Output Characteristics Transconductance
Axis Title Axis Title 0.10 10000 10 000 10000 ) Ω 0.08 Ciss 1000 1000 (pF) 1000 0.06 ine Coss V = 4.5 V GS ne ne ine ne tance 100 2nd l n-Resistance ( O 1st li 2nd li 2nd l - 1st li 0.04 apaci ) n C 100 100 DS(o C - R 10 C 0.02 rss V = 10 V GS 0 10 1 10 0 5 10 15 20 25 30 0 20 40 60 80 100 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
Axis Title Axis Title 50 10000 10 10000 ) I = 5 A D 40 (V 8 V = 50 V DS ) 1000 ltage 1000 o 30 6 rrent (A ine u ne ne ne ne ine C n ource V 1st li 2nd l 2nd li 1st li 2nd li rai 20 2nd l 4 D T = 25 °C - C 100 100 I D ate-to-S G 10 - 2 GS T = 125 °C V C T = -55 °C C 0 10 0 10 0 2 4 6 8 10 0 10 20 30 40 50 V - Gate-to-Source Voltage (V) Q - Total Gate Charge (nC) GS g
Transfer Characteristics Gate Charge
S20-0536-Rev. A, 13-Jul-2020
3
Document Number: 77502 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000