Datasheet MASTERGAN2 (STMicroelectronics) - 6
| 制造商 | STMicroelectronics |
| 描述 | High power density 600V Half bridge driver with two enhancement mode GaN HEMT |
| 页数 / 页 | 29 / 6 — MASTERGAN2. Electrical characteristics. 4.1. Driver. Table 5. Driver … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
MASTERGAN2. Electrical characteristics. 4.1. Driver. Table 5. Driver electrical characteristics. Symbol. Parameter. Test condition
该数据表的模型线
文件文字版本
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MASTERGAN2 Electrical characteristics 4 Electrical characteristics 4.1 Driver Table 5. Driver electrical characteristics
VCC = PVCC = 6 V; SENSE = GND; TJ = 25°C, unless otherwise specified (each voltage referred to GND unless otherwise specified)
Symbol Parameter Test condition Min Typ Max Unit Logic section supply
VCCthON VCC UV turn ON threshold (1) 4.2 4.5 4.75 V VCCthOFF VCC UV turn OFF threshold(1) 3.9 4.2 4.5 V VCChys VCC UV hysteresis(1) 0.2 0.3 0.45 V IQVCCU VCC undervoltage quiescent supply current VCC = PVCC = 3.8 V 320 410 μA VCC vs. GND SD/OD = LIN = 5 V; IQVCC VCC quiescent supply current HIN = 0 V; 680 900 μA BOOT = 7 V SD/OD = 5 V; ISVCC VCC switching supply current VBO = 6.5 V; 0.8 mA VS = 0 V; FSW = 500 kHz
Low-side driver section supply
IQPVCC PVCC quiescent supply current SD/OD = LIN = 5 V 150 μA PVCC vs. PGND VS = 0 V ISPVCC PVCC switching supply current 1.4 mA FSW = 500 kHz RBLEED GL vs. PGND Low side gate bleeder PVCC = PGND 75 100 125 kΩ RONL Low side turn on resistance (2) I(GL) = 1 mA (source) 52 Ω ROFFL Low side turn off resistance(2) I(GL) = 1 mA (sink) 2 Ω
High-side floating section supply
VBOthON VBO UV turn ON threshold (3) 3.6 4.0 4.4 V VBOthOFF VBO UV turn OFF threshold(3) 3.4 3.7 4.0 V VBOhys VBO UV hysteresis(3) 0.1 0.3 0.5 V BOOT vs. OUTb V I BO undervoltage quiescent supply QBOU V current(3) BO = 3.4 V 140 200 μA V I BO = 6 V; LIN = GND; QBO VBO quiescent supply current(3) 217 μA SD/OD = HIN = 5 V; VBO = 6 V; ISBO BOOT BOOT switching supply current SD/OD = 5 V; 1.9 mA VS = 0 V; FSW = 500 kHz ILK BOOT vs. SGND High voltage leakage current BOOT = OUT = 600 V 11 μA SD/OD = LIN = 5 V; RDBoot VCC vs. BOOT Bootstrap diode on resistance (4) HIN = GND = PGND 140 175 Ω VCC – BOOT = 0.5 V RONH High side turn on resistance(2) I(GH) = 1 mA (source) 77 Ω ROFFH High side turn off resistance(2) I(GH) = 1 mA (sink) 2 Ω
DS13597
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Rev 1 page 6/29
Document Outline Features Application Description 1 Block diagram 2 Pin description and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history Contents List of tables List of figures
MASTERGAN2 Electrical characteristics 4 Electrical characteristics 4.1 Driver Table 5. Driver electrical characteristics
VCC = PVCC = 6 V; SENSE = GND; TJ = 25°C, unless otherwise specified (each voltage referred to GND unless otherwise specified)
Symbol Parameter Test condition Min Typ Max Unit Logic section supply
VCCthON VCC UV turn ON threshold (1) 4.2 4.5 4.75 V VCCthOFF VCC UV turn OFF threshold(1) 3.9 4.2 4.5 V VCChys VCC UV hysteresis(1) 0.2 0.3 0.45 V IQVCCU VCC undervoltage quiescent supply current VCC = PVCC = 3.8 V 320 410 μA VCC vs. GND SD/OD = LIN = 5 V; IQVCC VCC quiescent supply current HIN = 0 V; 680 900 μA BOOT = 7 V SD/OD = 5 V; ISVCC VCC switching supply current VBO = 6.5 V; 0.8 mA VS = 0 V; FSW = 500 kHz
Low-side driver section supply
IQPVCC PVCC quiescent supply current SD/OD = LIN = 5 V 150 μA PVCC vs. PGND VS = 0 V ISPVCC PVCC switching supply current 1.4 mA FSW = 500 kHz RBLEED GL vs. PGND Low side gate bleeder PVCC = PGND 75 100 125 kΩ RONL Low side turn on resistance (2) I(GL) = 1 mA (source) 52 Ω ROFFL Low side turn off resistance(2) I(GL) = 1 mA (sink) 2 Ω
High-side floating section supply
VBOthON VBO UV turn ON threshold (3) 3.6 4.0 4.4 V VBOthOFF VBO UV turn OFF threshold(3) 3.4 3.7 4.0 V VBOhys VBO UV hysteresis(3) 0.1 0.3 0.5 V BOOT vs. OUTb V I BO undervoltage quiescent supply QBOU V current(3) BO = 3.4 V 140 200 μA V I BO = 6 V; LIN = GND; QBO VBO quiescent supply current(3) 217 μA SD/OD = HIN = 5 V; VBO = 6 V; ISBO BOOT BOOT switching supply current SD/OD = 5 V; 1.9 mA VS = 0 V; FSW = 500 kHz ILK BOOT vs. SGND High voltage leakage current BOOT = OUT = 600 V 11 μA SD/OD = LIN = 5 V; RDBoot VCC vs. BOOT Bootstrap diode on resistance (4) HIN = GND = PGND 140 175 Ω VCC – BOOT = 0.5 V RONH High side turn on resistance(2) I(GH) = 1 mA (source) 77 Ω ROFFH High side turn off resistance(2) I(GH) = 1 mA (sink) 2 Ω
DS13597
-
Rev 1 page 6/29
Document Outline Features Application Description 1 Block diagram 2 Pin description and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history Contents List of tables List of figures