Datasheet MTP2N50E (Motorola) - 3
| 制造商 | Motorola |
| 描述 | TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate |
| 页数 / 页 | 8 / 3 — TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On–Region Characteristics. … |
| 文件格式/大小 | PDF / 253 Kb |
| 文件语言 | 英语 |
TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On–Region Characteristics. Figure 2. Transfer Characteristics
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MTP2N50E
TYPICAL ELECTRICAL CHARACTERISTICS
4 4 T 8 V J = 25°C V V GS = 10 V 7 V DS ≥ 10 V TJ = – 55°C 25°C 3.5 6 V 100°C 3 3 (AMPS) (AMPS) 2.5 2 2 1.5 5 V , DRAIN CURRENT , DRAIN CURRENT 1 1 I D I D 0.5 0 0 0 2 4 6 8 10 12 14 16 18 20 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
8 4.2 V T GS = 10 V J = 25°C 7 ANCE (OHMS) ANCE (OHMS) 6 3.8 TJ = 100°C 5 4 3.4 25°C 3 O–SOURCE RESIST O–SOURCE RESIST VGS = 10 V 2 3 – 55°C 15 V , DRAIN–T 1 , DRAIN–T DS(on) 0 DS(on) 2.6 R 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 R 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current and Temperature and Gate Voltage
2 1000 VGS = 0 V V ANCE GS = 10 V ID = 2 A 1.6 TJ = 125°C 100 100°C 1.2 O–SOURCE RESIST , LEAKAGE (nA) 25°C (NORMALIZED) 10 0.8 I DSS , DRAIN–T DS(on)R 0.4 1 – 50 – 25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage Temperature Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data 3
TYPICAL ELECTRICAL CHARACTERISTICS
4 4 T 8 V J = 25°C V V GS = 10 V 7 V DS ≥ 10 V TJ = – 55°C 25°C 3.5 6 V 100°C 3 3 (AMPS) (AMPS) 2.5 2 2 1.5 5 V , DRAIN CURRENT , DRAIN CURRENT 1 1 I D I D 0.5 0 0 0 2 4 6 8 10 12 14 16 18 20 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
8 4.2 V T GS = 10 V J = 25°C 7 ANCE (OHMS) ANCE (OHMS) 6 3.8 TJ = 100°C 5 4 3.4 25°C 3 O–SOURCE RESIST O–SOURCE RESIST VGS = 10 V 2 3 – 55°C 15 V , DRAIN–T 1 , DRAIN–T DS(on) 0 DS(on) 2.6 R 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 R 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current and Temperature and Gate Voltage
2 1000 VGS = 0 V V ANCE GS = 10 V ID = 2 A 1.6 TJ = 125°C 100 100°C 1.2 O–SOURCE RESIST , LEAKAGE (nA) 25°C (NORMALIZED) 10 0.8 I DSS , DRAIN–T DS(on)R 0.4 1 – 50 – 25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage Temperature Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data 3