Datasheet NTH4L015N065SC1 (ON Semiconductor) - 6
| 制造商 | ON Semiconductor |
| 描述 | MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A |
| 页数 / 页 | 8 / 6 — NTH4L015N065SC1. TYPICAL CHARACTERISTICS. Figure 13. Junction−to−Case … |
| 文件格式/大小 | PDF / 280 Kb |
| 文件语言 | 英语 |
NTH4L015N065SC1. TYPICAL CHARACTERISTICS. Figure 13. Junction−to−Case Thermal Response. www.onsemi.com
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NTH4L015N065SC1 TYPICAL CHARACTERISTICS
1 °C/W) 0.5 Duty Cycle 0.1 0.2 ANCE ( 0.1 0.05 0.02 0.01
P
0.01
DM
Notes: (t). EFFECTIVE TRANSIENT Single Pulse R
t
JC = 0.3°C/W
1
Duty Cycle, D = t Z JC THERMAL RESIST 1/t2
t2
0.001 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6
1 °C/W) 0.5 Duty Cycle 0.1 0.2 ANCE ( 0.1 0.05 0.02 0.01
P
0.01
DM
Notes: (t). EFFECTIVE TRANSIENT Single Pulse R
t
JC = 0.3°C/W
1
Duty Cycle, D = t Z JC THERMAL RESIST 1/t2
t2
0.001 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6