Datasheet BUK7V4R2-40H (Nexperia) - 4
| 制造商 | Nexperia |
| 描述 | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
| 页数 / 页 | 13 / 4 — Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level … |
| 修订版 | 11022021 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
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Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032382 103 ID (A ( ) A Li L mit R DSon o n = V DS / I D I 102 tpt p= = 10 1 0 µ s µ 10 1 0 0 0 µ s 10 DC D 1 1 m s m 1 10 1 0 m s m 10 1 0 0 0 m s m 10-110-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2
aaa-032381 102 IAL A (A ( ) A (1) 1 10 (2) 2 1 (3) 3 10-110-3 10-2 10-1 1 10 tAL (ms) (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 5 - 1.64 1.76 K/W junction to mounting base BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032382 103 ID (A ( ) A Li L mit R DSon o n = V DS / I D I 102 tpt p= = 10 1 0 µ s µ 10 1 0 0 0 µ s 10 DC D 1 1 m s m 1 10 1 0 m s m 10 1 0 0 0 m s m 10-110-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2
aaa-032381 102 IAL A (A ( ) A (1) 1 10 (2) 2 1 (3) 3 10-110-3 10-2 10-1 1 10 tAL (ms) (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 5 - 1.64 1.76 K/W junction to mounting base BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents