Datasheet BUK7V4R2-40H (Nexperia) - 6
| 制造商 | Nexperia |
| 描述 | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
| 页数 / 页 | 13 / 6 — Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level … |
| 修订版 | 11022021 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration). Symbol
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Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 1850 2590 pF C T oss output capacitance j = 25 °C; Fig. 15 - 565 791 pF Crss reverse transfer - 91 200 pF capacitance td(on) turn-on delay time VDS = 30 V; RL = 1.5 Ω; VGS = 10 V; - 7 - ns t R r rise time G(ext) = 5 Ω; Tj = 25 °C - 9 - ns td(of ) turn-of delay time - 19 - ns tf fall time - 11.8 - ns
Source-drain diode FET1 and FET2
VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.81 1 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 18.6 - ns Q V r recovered charge DS = 20 V; Tj = 25 °C - 9.2 - nC aaa-032384 80 aaa-032385 10 ID VGS S = = 5. 5 5 5 V 5 5 V RD R S D o S n o (A) A (m ( Ω m ) 64 8 48 6 10 1 0 V 32 4. 4 5 . 5 V 4 16 2 4 4 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 20 A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values, of gate-source voltage; typical values, FET1 and FET1 and FET2 FET2
BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 6 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 1850 2590 pF C T oss output capacitance j = 25 °C; Fig. 15 - 565 791 pF Crss reverse transfer - 91 200 pF capacitance td(on) turn-on delay time VDS = 30 V; RL = 1.5 Ω; VGS = 10 V; - 7 - ns t R r rise time G(ext) = 5 Ω; Tj = 25 °C - 9 - ns td(of ) turn-of delay time - 19 - ns tf fall time - 11.8 - ns
Source-drain diode FET1 and FET2
VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.81 1 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 18.6 - ns Q V r recovered charge DS = 20 V; Tj = 25 °C - 9.2 - nC aaa-032384 80 aaa-032385 10 ID VGS S = = 5. 5 5 5 V 5 5 V RD R S D o S n o (A) A (m ( Ω m ) 64 8 48 6 10 1 0 V 32 4. 4 5 . 5 V 4 16 2 4 4 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 20 A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values, of gate-source voltage; typical values, FET1 and FET1 and FET2 FET2
BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 6 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents