Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Darlington Complementary Silicon Power Transistors |
| 页数 / 页 | 8 / 2 — BDW42G (NPN), BDW46G, BDW47G (PNP). ELECTRICAL CHARACTERISTICS. … |
| 修订版 | 17 |
| 文件格式/大小 | PDF / 239 Kb |
| 文件语言 | 英语 |
BDW42G (NPN), BDW46G, BDW47G (PNP). ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS
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BDW42G (NPN), BDW46G, BDW47G (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) BDW46 80 − BDW42/BDW47 100 − Collector Cutoff Current ICEO mAdc (VCE = 40 Vdc, IB = 0) BDW46 − 2.0 (VCE = 50 Vdc, IB = 0) BDW42/BDW47 − 2.0 Collector Cutoff Current ICBO mAdc (VCB = 80 Vdc, IE = 0) BDW46 − 1.0 (VCB = 100 Vdc, IE = 0) BDW42/BDW47 − 1.0 Emitter Cutoff Current IEBO − 2.0 mAdc (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE (IC = 5.0 Adc, VCE = 4.0 Vdc) 1000 − (IC = 10 Adc, VCE = 4.0 Vdc) 250 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 5.0 Adc, IB = 10 mAdc) − 2.0 (IC = 10 Adc, IB = 50 mAdc) − 3.0 Base−Emitter On Voltage VBE(on) − 3.0 Vdc (IC = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN
(Note 2) Second Breakdown Collector IS/b Adc Current with Base Forward Biased BDW42 VCE = 28.4 Vdc 3.0 − VCE = 40 Vdc 1.2 − BDW46/BDW47 VCE = 22.5 Vdc 3.8 − VCE = 36 Vdc 1.2 −
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio fT 4.0 − MHz (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 − 200 BDW46/BDW47 − 300 Small−Signal Current Gain hfe 300 − (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms.
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BDW42G (NPN), BDW46G, BDW47G (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) BDW46 80 − BDW42/BDW47 100 − Collector Cutoff Current ICEO mAdc (VCE = 40 Vdc, IB = 0) BDW46 − 2.0 (VCE = 50 Vdc, IB = 0) BDW42/BDW47 − 2.0 Collector Cutoff Current ICBO mAdc (VCB = 80 Vdc, IE = 0) BDW46 − 1.0 (VCB = 100 Vdc, IE = 0) BDW42/BDW47 − 1.0 Emitter Cutoff Current IEBO − 2.0 mAdc (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE (IC = 5.0 Adc, VCE = 4.0 Vdc) 1000 − (IC = 10 Adc, VCE = 4.0 Vdc) 250 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 5.0 Adc, IB = 10 mAdc) − 2.0 (IC = 10 Adc, IB = 50 mAdc) − 3.0 Base−Emitter On Voltage VBE(on) − 3.0 Vdc (IC = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN
(Note 2) Second Breakdown Collector IS/b Adc Current with Base Forward Biased BDW42 VCE = 28.4 Vdc 3.0 − VCE = 40 Vdc 1.2 − BDW46/BDW47 VCE = 22.5 Vdc 3.8 − VCE = 36 Vdc 1.2 −
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio fT 4.0 − MHz (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 − 200 BDW46/BDW47 − 300 Small−Signal Current Gain hfe 300 − (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms.
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