Datasheet HMC8142 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | 81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector |
| 页数 / 页 | 16 / 1 — 81 GHz to 86 GHz, E-Band Power Amplifier. With Power Detector. Data … |
| 修订版 | A |
| 文件格式/大小 | PDF / 319 Kb |
| 文件语言 | 英语 |
81 GHz to 86 GHz, E-Band Power Amplifier. With Power Detector. Data Sheet. HMC8142. FEATURES. GENERAL DESCRIPTION
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81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector Data Sheet HMC8142 FEATURES GENERAL DESCRIPTION Gain: 21 dB typical
The HMC8142 is an integrated E-band gallium arsenide (GaAs),
Output power for 1 dB compression (P1dB): 25 dBm typical
pseudomorphic high electron mobility transistor (pHEMT),
Saturated output power (PSAT): 26 dBm typical
monolithic microwave integrated circuit (MMIC), medium power
Output third-order intercept (OIP3): 29 dBm typical
amplifier with a temperature compensated on-chip power detector
Input return loss: 12 dB typical
that operates from 81 GHz to 86 GHz. The HMC8142 provides
Output return loss: 8 dB typical
21 dB of gain, 25 dBm of output power at 1 dB compression,
DC supply: 4 V at 450 mA
29 dBm of output third-order intercept, and 26 dBm of saturated
No external matching required
output power at 20% power added efficiency (PAE) from a 4 V
Die size: 3.039 mm × 1.999 mm × 0.05 mm
power supply. The HMC8142 exhibits excellent linearity and is opti-
APPLICATIONS
mized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain
E-band communication systems
make it an excellent candidate for last stage signal amplification
High capacity wireless backhaul radio systems
before the antenna. All data is taken with the chip in a 50 Ω test
Test and measurement
fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 VDD1 VDD2 VDD3 VDD4 HMC8142 3 12 RFIN RFOUT 2 13 1 14 VGG1 VGG2 VGG3 VGG4 VREF VDET 25 24 23 22 21 20 19 18 17 16 15
1 -00 25 134 Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
The HMC8142 is an integrated E-band gallium arsenide (GaAs),
Output power for 1 dB compression (P1dB): 25 dBm typical
pseudomorphic high electron mobility transistor (pHEMT),
Saturated output power (PSAT): 26 dBm typical
monolithic microwave integrated circuit (MMIC), medium power
Output third-order intercept (OIP3): 29 dBm typical
amplifier with a temperature compensated on-chip power detector
Input return loss: 12 dB typical
that operates from 81 GHz to 86 GHz. The HMC8142 provides
Output return loss: 8 dB typical
21 dB of gain, 25 dBm of output power at 1 dB compression,
DC supply: 4 V at 450 mA
29 dBm of output third-order intercept, and 26 dBm of saturated
No external matching required
output power at 20% power added efficiency (PAE) from a 4 V
Die size: 3.039 mm × 1.999 mm × 0.05 mm
power supply. The HMC8142 exhibits excellent linearity and is opti-
APPLICATIONS
mized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain
E-band communication systems
make it an excellent candidate for last stage signal amplification
High capacity wireless backhaul radio systems
before the antenna. All data is taken with the chip in a 50 Ω test
Test and measurement
fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 VDD1 VDD2 VDD3 VDD4 HMC8142 3 12 RFIN RFOUT 2 13 1 14 VGG1 VGG2 VGG3 VGG4 VREF VDET 25 24 23 22 21 20 19 18 17 16 15
1 -00 25 134 Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE