Datasheet HMC1082CHIP (Analog Devices)

5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier Data Sheet HMC1082CHIP FEATURES FUNCTIONAL BLOCK DIAGRAM High saturated output power: 26 dBm with 24% PAE 2 3 4 High gain: 24 dB typical VDD1 VDD2 VDD3 High output IP3: 36 dBm typical HMC1082CHIP High output P1dB: 25.5 dBm Die size: 2.19 mm × 1.05 × 0.1 mm RFIN RFOUT 1 5 APPLICATIONS 2.5kΩ 2.5kΩ Software defined radios VGG Electronics warfare (EW)
001
6 Radar applications
20651- Figure 1.
Electronic countermeasures (ECMs) GENERAL DESCRIPTION
The HMC1082CHIP is a gallium arsenide (GaAs), monolithic from a 5 V supply voltage. The saturated output power (PSAT) microwave integrated circuit (MMIC), pseudomorphic high is 26 dBm with 24% power added efficiency (PAE). electron mobility transistor (pHEMT), driver amplifier that The HMC1082CHIP is an ideal driver amplifier for a wide range operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides of applications including point to point radios from 5.5 GHz to a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can output power for 1 dB compression, requiring only 220 mA also be used for 6 GHz to 18 GHz EW and ECM applications.
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE 7 GHz TO 15.5 GHz FREQUENCY RANGE 15.5 GHz TO 18 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE