Datasheet HMC1082CHIP (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier |
| 页数 / 页 | 15 / 3 — Data Sheet. HMC1082CHIP. SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 378 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC1082CHIP. SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol Min Typ. Max Unit
该数据表的模型线
文件文字版本
Data Sheet HMC1082CHIP SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE
TA = 25°C, drain bias voltage (VDD) = 5 V, and IDQ = 220 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 5.5 7 GHz GAIN 22 24 dB Gain Variation Over Temperature 0.006 dB/°C RETURN LOSS Input 14 dB Output 11 dB OUTPUT Output Power for 1 dB P1dB 23 25 dBm Compression Saturated Output Power PSAT 25.5 dBm Output Third-Order Intercept IP3 37.5 dBm Measurement taken at output power (POUT) per tone = 12 dBm SUPPLY Current IDQ 220 mA Adjust VGG to achieve IDQ = 220 mA typical Voltage VDD 4 5 V
7 GHz TO 15.5 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 220 mA, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 7 15.5 GHz GAIN 22 24 dB Gain Variation Over Temperature 0.008 dB/°C RETURN LOSS Input 11.5 dB Output 13 dB OUTPUT Output Power for 1 dB Compression P1dB 23.5 25.5 dBm Saturated Output Power PSAT 26 dBm With 24% PAE Output Third-Order Intercept IP3 36 dBm Measurement taken at POUT per tone = 12 dBm SUPPLY Current IDQ 220 mA Adjust VGG to achieve IDQ = 220 mA typical Voltage VDD 4 5 V Rev. B | Page 3 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE 7 GHz TO 15.5 GHz FREQUENCY RANGE 15.5 GHz TO 18 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, drain bias voltage (VDD) = 5 V, and IDQ = 220 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 5.5 7 GHz GAIN 22 24 dB Gain Variation Over Temperature 0.006 dB/°C RETURN LOSS Input 14 dB Output 11 dB OUTPUT Output Power for 1 dB P1dB 23 25 dBm Compression Saturated Output Power PSAT 25.5 dBm Output Third-Order Intercept IP3 37.5 dBm Measurement taken at output power (POUT) per tone = 12 dBm SUPPLY Current IDQ 220 mA Adjust VGG to achieve IDQ = 220 mA typical Voltage VDD 4 5 V
7 GHz TO 15.5 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 220 mA, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 7 15.5 GHz GAIN 22 24 dB Gain Variation Over Temperature 0.008 dB/°C RETURN LOSS Input 11.5 dB Output 13 dB OUTPUT Output Power for 1 dB Compression P1dB 23.5 25.5 dBm Saturated Output Power PSAT 26 dBm With 24% PAE Output Third-Order Intercept IP3 36 dBm Measurement taken at POUT per tone = 12 dBm SUPPLY Current IDQ 220 mA Adjust VGG to achieve IDQ = 220 mA typical Voltage VDD 4 5 V Rev. B | Page 3 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE 7 GHz TO 15.5 GHz FREQUENCY RANGE 15.5 GHz TO 18 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE