Datasheet HMC903 (Analog Devices) - 7
| 制造商 | Analog Devices |
| 描述 | 6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier |
| 页数 / 页 | 13 / 7 — Data Sheet. HMC903. +85°C. GAIN. +25°C. POUT. –55°C. PAE. %) (. AE , P. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 212 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC903. +85°C. GAIN. +25°C. POUT. –55°C. PAE. %) (. AE , P. B) d. Bm) d. N ( AI. B ( 1d. , G. Bm) d (. UT O. –21. –18. –15. –12. FREQUENCY (GHz)
该数据表的模型线
文件文字版本
Data Sheet HMC903 25 24 +85°C GAIN +25°C POUT –55°C 20 PAE 20 %) ( 16 AE , P 15 B) d 12 Bm) d N ( AI B ( 1d , G 8 P 10 Bm) d ( 4 UT O 5 P 0 0 –4
017
6 8 10 12 14 16 18
014
–21 –18 –15 –12 –9 –6 –3 0 3 FREQUENCY (GHz) INPUT POWER (dBm)
14481- 14481- Figure 14. P1dB vs. Frequency at Various Temperatures Figure 17. POUT, Gain, and Power Added Efficency (PAE) vs. Input Power at 12 GHz
0 22 7 +85°C NOISE FIGURE +25°C GAIN –55°C 20 P1dB 6 –10 ) B 18 5 (d ) N –20 Bm) d dB IO ( T B ( E A 16 4 R L 1d –30 SO , P B) 14 FIGU d 3 E SE I N ( –40 OIS AI N EVER G 12 2 R –50 10 1 –60 8 0 6 8 10 12 14 16 18
015
3.0 3.5 4.0
018
FREQUENCY (GHz) V
14481-
DD (V)
14481- Figure 15. Reverse Isolation vs. Frequency at Various Temperatures Figure 18. Gain, P1dB, and Noise Figure vs. Supply Voltage (VDD) at 12 GHz
25 +85°C +25°C –55°C 20 15 Bm) d ( AT SP 10 5 0 6 8 10 12 14 16 18
016
FREQUENCY (GHz)
14481- Figure 16. PSAT vs. Frequency at Various Temperatures Rev. C | Page 7 of 13 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
017
6 8 10 12 14 16 18
014
–21 –18 –15 –12 –9 –6 –3 0 3 FREQUENCY (GHz) INPUT POWER (dBm)
14481- 14481- Figure 14. P1dB vs. Frequency at Various Temperatures Figure 17. POUT, Gain, and Power Added Efficency (PAE) vs. Input Power at 12 GHz
0 22 7 +85°C NOISE FIGURE +25°C GAIN –55°C 20 P1dB 6 –10 ) B 18 5 (d ) N –20 Bm) d dB IO ( T B ( E A 16 4 R L 1d –30 SO , P B) 14 FIGU d 3 E SE I N ( –40 OIS AI N EVER G 12 2 R –50 10 1 –60 8 0 6 8 10 12 14 16 18
015
3.0 3.5 4.0
018
FREQUENCY (GHz) V
14481-
DD (V)
14481- Figure 15. Reverse Isolation vs. Frequency at Various Temperatures Figure 18. Gain, P1dB, and Noise Figure vs. Supply Voltage (VDD) at 12 GHz
25 +85°C +25°C –55°C 20 15 Bm) d ( AT SP 10 5 0 6 8 10 12 14 16 18
016
FREQUENCY (GHz)
14481- Figure 16. PSAT vs. Frequency at Various Temperatures Rev. C | Page 7 of 13 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE