Datasheet HMC902LP3E (Analog Devices) - 9

制造商Analog Devices
描述5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier
页数 / 页13 / 9 — Data Sheet. HMC902LP3E. THEORY OF OPERATION. DD1. VDD2. RFOUT. VGG1. VGG2
修订版E
文件格式/大小PDF / 413 Kb
文件语言英语

Data Sheet. HMC902LP3E. THEORY OF OPERATION. DD1. VDD2. RFOUT. VGG1. VGG2

Data Sheet HMC902LP3E THEORY OF OPERATION DD1 VDD2 RFOUT VGG1 VGG2

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Data Sheet HMC902LP3E THEORY OF OPERATION
The HMC902LP3E is a GaAs, MMIC, pHEMT, LNA. The The HMC902LP3E has single-ended input and output ports with HMC902LP3E amplifier uses two gain stages in series. The basic impedances that are nominally equal to 50 Ω over the 5 GHz to schematic for the amplifier is shown in Figure 21, which forms a 11 GHz frequency range. Consequently, the device can be directly LNA operating from 5 GHz to 11 GHz with excellent noise inserted into a 50 Ω system with no required impedance matching figure performance. circuitry, which also means multiple HMC902LP3E amplifiers
V
can be cascaded back to back without the need for external
DD1 VDD2
matching circuitry. The input and output impedances are sufficiently stable vs. variations in temperature and supply voltage that no impedance
RF
matching compensation is required.
IN RFOUT
It is critical to supply very low inductance ground connections to the package ground pad to ensure stable operation. To achieve optimal performance from the HMC902LP3E and to prevent 021
VGG1 VGG2
damage to the device, do not exceed the absolute maximum 14524- Figure 21. Basic Schematic for HMC902LP3E ratings. Rev. E | Page 9 of 13 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION EVALUATION PRINTED CIRCUIT BOARD (PCB) APPLICATION CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE