Datasheet HMC752LC4 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz |
| 页数 / 页 | 7 / 4 — HMC752LC4. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 24 - 28 GHz. Gain, Noise … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
HMC752LC4. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 24 - 28 GHz. Gain, Noise Figure & P1dB vs. Power Compression @ 28 GHz
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HMC752LC4
v02.0618
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Gain, Noise Figure & P1dB vs. Power Compression @ 28 GHz Supply Voltage @ 28 GHz
30 28 7 ) % 6 25 24 ( E T A ) m N 20 Gain 5 O ), P 20 B P1dB d IS M B Pout ( d E ( Gain B 16 4 d F PAE IN 1 IG 15 A ), P U 12 3 R ), G B d E m ( 10 ( d E - S B d IN 8 2 B A ) t ( u G IS o 5 P 4 1 Noise Figure O 0 0 0 -25 -20 -15 -10 -5 2.5 3 3.5 INPUT POWER (dBm) Vdd (V) W N O
Absolute Maximum Ratings
S - L Drain Bias Voltage +4.5V R RF Input Power +12 dBm ELECTROSTATIC SENSITIVE DEVICE IE Gate Bias Voltage -1 to 0.3V OBSERVE HANDLING PRECAUTIONS Channel Temperature 175 °C LIF Continuous Pdiss (T = 85 °C) 0.21 W (derate 6.7 mW/°C above 85 °C) P Thermal Resistance M 148 °C/W (Channel to ground paddle) A Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain, Noise Figure & P1dB vs. Supply Voltage @ 28 GHz Power Compression @ 28 GHz Reverse Isolation vs. Temperature Psat vs. Temperature P1dB vs. Temperature Output IP3 vs. Idd Output IP3 vs. Temperature Noise Figure vs. Idd Noise Figure vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Idd Gain vs. Temperature P1dB vs. Idd Absolute Maximum Ratings
v02.0618
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Gain, Noise Figure & P1dB vs. Power Compression @ 28 GHz Supply Voltage @ 28 GHz
30 28 7 ) % 6 25 24 ( E T A ) m N 20 Gain 5 O ), P 20 B P1dB d IS M B Pout ( d E ( Gain B 16 4 d F PAE IN 1 IG 15 A ), P U 12 3 R ), G B d E m ( 10 ( d E - S B d IN 8 2 B A ) t ( u G IS o 5 P 4 1 Noise Figure O 0 0 0 -25 -20 -15 -10 -5 2.5 3 3.5 INPUT POWER (dBm) Vdd (V) W N O
Absolute Maximum Ratings
S - L Drain Bias Voltage +4.5V R RF Input Power +12 dBm ELECTROSTATIC SENSITIVE DEVICE IE Gate Bias Voltage -1 to 0.3V OBSERVE HANDLING PRECAUTIONS Channel Temperature 175 °C LIF Continuous Pdiss (T = 85 °C) 0.21 W (derate 6.7 mW/°C above 85 °C) P Thermal Resistance M 148 °C/W (Channel to ground paddle) A Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain, Noise Figure & P1dB vs. Supply Voltage @ 28 GHz Power Compression @ 28 GHz Reverse Isolation vs. Temperature Psat vs. Temperature P1dB vs. Temperature Output IP3 vs. Idd Output IP3 vs. Temperature Noise Figure vs. Idd Noise Figure vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Idd Gain vs. Temperature P1dB vs. Idd Absolute Maximum Ratings