Datasheet HMC-ALH102 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 6 / 4 — HMC-ALH102. GaAs HEMT MMIC WIDEBAND. LOW NOISE AMPLIFIER, 2 - 20 GHz. Pad … |
| 文件格式/大小 | PDF / 464 Kb |
| 文件语言 | 英语 |
HMC-ALH102. GaAs HEMT MMIC WIDEBAND. LOW NOISE AMPLIFIER, 2 - 20 GHz. Pad Descriptions
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HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Pad Descriptions
Pad Number Function Pad Description Interface Schematic 1 RFIN This pas is AC coupled and matched to 50 Ohms. IP H Power Supply Voltage for the amplifier. See Assembly Dia- 2 Vdd gram for required external components. C - S Gate control for amplifier. Please follow “MMIC Amplifier Bias- R 3, 5 Vgg ing Procedure” application note. See assembly for required external components. IE 4 RFOUT This pad is AC coupled and matched to 50 Ohms. LIF P Die Bottom GND Die Bottom must be connected to RF/DC ground. M A E IS O N W LO For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v03.0118
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Pad Descriptions
Pad Number Function Pad Description Interface Schematic 1 RFIN This pas is AC coupled and matched to 50 Ohms. IP H Power Supply Voltage for the amplifier. See Assembly Dia- 2 Vdd gram for required external components. C - S Gate control for amplifier. Please follow “MMIC Amplifier Bias- R 3, 5 Vgg ing Procedure” application note. See assembly for required external components. IE 4 RFOUT This pad is AC coupled and matched to 50 Ohms. LIF P Die Bottom GND Die Bottom must be connected to RF/DC ground. M A E IS O N W LO For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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