Datasheet HMC463LH250 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 6 / 4 — HMC463LH250. GaAs pHEMT MMIC LOW NOISE. AGC AMPLIFIER, 2 - 20 GHz. Gain @ … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
HMC463LH250. GaAs pHEMT MMIC LOW NOISE. AGC AMPLIFIER, 2 - 20 GHz. Gain @ Several Control Voltages. Absolute Maximum Ratings
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HMC463LH250
v06.1217
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Gain @ Several Control Voltages Absolute Maximum Ratings
18 Drain Bias Voltage (Vdd) +9 V 14 Gate Bias Voltage (Vgg1) -2 to 0 Vdc T 10 Gate Bias Current (Igg1) 2.5 mA M ) (Vdd -9) 6 B Gate Bias Voltage (Vgg2)(AGC) d Vdc to +2 Vdc ( 2 IN A RF Input Power (RFIN)(Vdd = +5 V) +18 dBm G -2 Channel Temperature 175 °C E - S -6 Vgg2=-1.3 V Vgg2=-0.8 V Storage Temperature -65 to +150 °C Vgg2=-1.2 V Vgg2=-0.6 V IS -10 Vgg2=-1.1 V Vgg2=-0.4 V Operating Temperature -40 to +85 °C Vgg2=-1.0 V Vgg2=-0.2 V O Vgg2=-0.9 V Vgg2=0 V Class 0B - Passed -14 ESD Sensitivity (HBM) 150V 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) W N
Typical Supply Current vs. Vdd
O ELECTROSTATIC SENSITIVE DEVICE Vdd (V) Idd (mA) OBSERVE HANDLING PRECAUTIONS +4.5 58 S - L +5.0 60 R
12-T
+5.5
erminal Ceramic Leadless Chip Carrier [LCC]
62
(E-12-2) Dimensions shown in millimeters.
IE
Outline Drawing
LIF
6.48
P
6.35 SQ 2.54 BSC 1.90 PIN 1 6.22 BSC INDICATOR
M
PIN 1 INDICATOR 10 12
A
1.27 0.41 BSC BSC 9 1 EXPOSED PAD 7 3 0.97 6 4 BSC TOP VIEW BOTTOM VIEW R 0.15 1.27 BSC 1.27 MAX SIDE VIEW FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND SEATING FUNCTION DESCRIPTIONS PLANE SECTION OF THIS DATA SHEET. PKG-000000 12-19-2016-A
12-Terminal Ceramic Leadless Chip Carrier [LCC] (E-12-2) Dimensions shown in millimeters.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] HMC463LH250 Ceramic & Kovar Au MSL1 [1] H463 XXXX [1] Max peak reflow temperature of 250 °C [2] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
v06.1217
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Gain @ Several Control Voltages Absolute Maximum Ratings
18 Drain Bias Voltage (Vdd) +9 V 14 Gate Bias Voltage (Vgg1) -2 to 0 Vdc T 10 Gate Bias Current (Igg1) 2.5 mA M ) (Vdd -9) 6 B Gate Bias Voltage (Vgg2)(AGC) d Vdc to +2 Vdc ( 2 IN A RF Input Power (RFIN)(Vdd = +5 V) +18 dBm G -2 Channel Temperature 175 °C E - S -6 Vgg2=-1.3 V Vgg2=-0.8 V Storage Temperature -65 to +150 °C Vgg2=-1.2 V Vgg2=-0.6 V IS -10 Vgg2=-1.1 V Vgg2=-0.4 V Operating Temperature -40 to +85 °C Vgg2=-1.0 V Vgg2=-0.2 V O Vgg2=-0.9 V Vgg2=0 V Class 0B - Passed -14 ESD Sensitivity (HBM) 150V 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) W N
Typical Supply Current vs. Vdd
O ELECTROSTATIC SENSITIVE DEVICE Vdd (V) Idd (mA) OBSERVE HANDLING PRECAUTIONS +4.5 58 S - L +5.0 60 R
12-T
+5.5
erminal Ceramic Leadless Chip Carrier [LCC]
62
(E-12-2) Dimensions shown in millimeters.
IE
Outline Drawing
LIF
6.48
P
6.35 SQ 2.54 BSC 1.90 PIN 1 6.22 BSC INDICATOR
M
PIN 1 INDICATOR 10 12
A
1.27 0.41 BSC BSC 9 1 EXPOSED PAD 7 3 0.97 6 4 BSC TOP VIEW BOTTOM VIEW R 0.15 1.27 BSC 1.27 MAX SIDE VIEW FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND SEATING FUNCTION DESCRIPTIONS PLANE SECTION OF THIS DATA SHEET. PKG-000000 12-19-2016-A
12-Terminal Ceramic Leadless Chip Carrier [LCC] (E-12-2) Dimensions shown in millimeters.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] HMC463LH250 Ceramic & Kovar Au MSL1 [1] H463 XXXX [1] Max peak reflow temperature of 250 °C [2] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4