Datasheet HMC463 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 8 / 4 — HMC463. GaAs PHEMT MMIC LOW NOISE. AGC AMPLIFIER, 2 - 20 GHz. Gain @ … |
| 文件格式/大小 | PDF / 658 Kb |
| 文件语言 | 英语 |
HMC463. GaAs PHEMT MMIC LOW NOISE. AGC AMPLIFIER, 2 - 20 GHz. Gain @ Several Control Voltages. Absolute Maximum Ratings
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HMC463
v11.0617
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
1
Gain @ Several Control Voltages
20 18 Vgg 2 = -1.0V Vgg 2 = -0.9V Vgg 2 = -0.6V Vgg 2 = -0.4V Vgg 2 = 0V 16 IP 14 12 H 10 8 6 4 Vgg 2 = -1.1V GAIN (dB) 2 Vgg 2 = -1.2V E - C 0 -2 Vgg 2 = -1.3V IS -4 -6 O -8 -10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) W N O
Absolute Maximum Ratings Typical Supply Current vs. Vdd
S - L Drain Bias Voltage (Vdd) +9 V Vdd (V) Idd (mA) R Gate Bias Voltage (Vgg1) -2 to 0 Vdc +4.5 58 IE Gate Bias Current (Igg1) 2.5 mA +5.0 60 (Vdd -9) +5.5 62 Gate Bias Voltage (Vgg2)(AGC) LIF Vdc to +2 Vdc P RF Input Power (RFIN)(Vdd = +5 V) +18 dBm M Channel Temperature 175 °C ELECTROSTATIC SENSITIVE DEVICE A Continuous Pdiss (T= 85 °C) OBSERVE HANDLING PRECAUTIONS 1.85 W (derate 20.6 mW/°C above 85 °C) Thermal Resistance 48.6 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Class 0B - Passed ESD Sensitivity (HBM) 150V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
1 - 4
Application Support: Phone: 1-800-ANALOG-D
v11.0617
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
1
Gain @ Several Control Voltages
20 18 Vgg 2 = -1.0V Vgg 2 = -0.9V Vgg 2 = -0.6V Vgg 2 = -0.4V Vgg 2 = 0V 16 IP 14 12 H 10 8 6 4 Vgg 2 = -1.1V GAIN (dB) 2 Vgg 2 = -1.2V E - C 0 -2 Vgg 2 = -1.3V IS -4 -6 O -8 -10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) W N O
Absolute Maximum Ratings Typical Supply Current vs. Vdd
S - L Drain Bias Voltage (Vdd) +9 V Vdd (V) Idd (mA) R Gate Bias Voltage (Vgg1) -2 to 0 Vdc +4.5 58 IE Gate Bias Current (Igg1) 2.5 mA +5.0 60 (Vdd -9) +5.5 62 Gate Bias Voltage (Vgg2)(AGC) LIF Vdc to +2 Vdc P RF Input Power (RFIN)(Vdd = +5 V) +18 dBm M Channel Temperature 175 °C ELECTROSTATIC SENSITIVE DEVICE A Continuous Pdiss (T= 85 °C) OBSERVE HANDLING PRECAUTIONS 1.85 W (derate 20.6 mW/°C above 85 °C) Thermal Resistance 48.6 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Class 0B - Passed ESD Sensitivity (HBM) 150V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
1 - 4
Application Support: Phone: 1-800-ANALOG-D