Datasheet HMC998A (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC -22 GHz |
| 页数 / 页 | 16 / 5 — HMC998A. GaAs pHEMT MMIC. 2 WATT POWER AMPLIFIER, DC - 22 GHz. Low … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
HMC998A. GaAs pHEMT MMIC. 2 WATT POWER AMPLIFIER, DC - 22 GHz. Low Frequency Psat vs. Temperature. Psat vs. Temperature
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HMC998A
v03.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Low Frequency Psat vs. Temperature Psat vs. Temperature
36 36 IP 34 34 H 32 32 30 30 Psat (dBm) Psat (dBm) R - C 28 28 E 26 26 W 24 24 O 0 2 4 6 8 10 12 14 16 18 20 22 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -55C +25C +85C -55C R & P A E
Psat vs. Vdd Psat vs. Idd
IN 36 36 34 34 32 32 S - L R 30 30 Psat (dBm) Psat (dBm) IE 28 28 26 26 LIF P 24 24 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 M FREQUENCY (GHz) FREQUENCY (GHz) A +11V +13V +15V 350mA 450mA 400mA 500mA +12V +14V
Power Compression @ 2 GHz Power Compression @ 10 GHz
40 800 40 800 35 750 35 750 30 700 30 700 25 650 650 Idd (mA) 25 Idd (mA) 20 600 20 600 15 550 15 550 10 500 10 500 Pout(dBm), GAIN(dB), PAE(%) 5 450 Pout(dBm), GAIN(dB), PAE(%) 5 450 0 400 0 400 0 4 8 12 16 20 24 0 4 8 12 16 20 24 INPUT POWER (dBm) INPUT POWER (dBm) Pout Gain PAE Pout Gain PAE Idd Idd For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
v03.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Low Frequency Psat vs. Temperature Psat vs. Temperature
36 36 IP 34 34 H 32 32 30 30 Psat (dBm) Psat (dBm) R - C 28 28 E 26 26 W 24 24 O 0 2 4 6 8 10 12 14 16 18 20 22 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -55C +25C +85C -55C R & P A E
Psat vs. Vdd Psat vs. Idd
IN 36 36 34 34 32 32 S - L R 30 30 Psat (dBm) Psat (dBm) IE 28 28 26 26 LIF P 24 24 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 M FREQUENCY (GHz) FREQUENCY (GHz) A +11V +13V +15V 350mA 450mA 400mA 500mA +12V +14V
Power Compression @ 2 GHz Power Compression @ 10 GHz
40 800 40 800 35 750 35 750 30 700 30 700 25 650 650 Idd (mA) 25 Idd (mA) 20 600 20 600 15 550 15 550 10 500 10 500 Pout(dBm), GAIN(dB), PAE(%) 5 450 Pout(dBm), GAIN(dB), PAE(%) 5 450 0 400 0 400 0 4 8 12 16 20 24 0 4 8 12 16 20 24 INPUT POWER (dBm) INPUT POWER (dBm) Pout Gain PAE Pout Gain PAE Idd Idd For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs