Datasheet HMC907A (Analog Devices) - 7
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz |
| 页数 / 页 | 12 / 7 — HMC907A. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. Low Frequency … |
| 文件格式/大小 | PDF / 915 Kb |
| 文件语言 | 英语 |
HMC907A. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. Low Frequency OIP3 vs. Temperature. OIP3 vs. Temperature
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文件文字版本
HMC907A
v03.0218
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Low Frequency OIP3 vs. Temperature OIP3 vs. Temperature @ Pout = +16 dBm / Tone @ Pout = +16 dBm / Tone
46 48 IP 44 46 H 44 42 42 ) 40 ) m m 40 (dB 38 (dB 3 3 38 R - C IP IP 36 +25C +25C +85C E 36 +85C -55C 34 -55C 34 W 32 32 O 30 30 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) R & P
OIP3 vs. Supply Voltage
IA
@ Pout = +16 dBm / Tone Output IM3 @ Vdd = +8V
IN 48 70 46 60 44 S - L 42 50 R ) m c 40 (dB (dB 40 IE 3 3 38 IP IM +8V 36 +9V 30 +10V 2GHz LIF +11V 6GHz 34 10GHz P 20 14GHz 18GHz 32 22GHz M 30 10 A 0 4 8 12 16 20 24 10 12 14 16 18 20 22 FREQUENCY (GHz) Pout/TONE (dBm)
Output IM3 @ Vdd = +9V Output IM3 @ Vdd = +10V
70 70 60 60 50 ) c 50 ) c (dB 40 3 (dB IM 40 3 IM 30 2GHz 30 6GHz 10GHz 2GHz 6GHz 20 14GHz 10GHz 18GHz 22GHz 20 14GHz 18GHz 22GHz 10 10 12 14 16 18 20 22 10 10 12 14 16 18 20 22 Pout/TONE (dBm) Pout/TONE (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Reverse Isolation vs. Temperature Noise Figure vs. Frequency Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz Power Compression @ 2 GHz Power Dissipation Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
v03.0218
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Low Frequency OIP3 vs. Temperature OIP3 vs. Temperature @ Pout = +16 dBm / Tone @ Pout = +16 dBm / Tone
46 48 IP 44 46 H 44 42 42 ) 40 ) m m 40 (dB 38 (dB 3 3 38 R - C IP IP 36 +25C +25C +85C E 36 +85C -55C 34 -55C 34 W 32 32 O 30 30 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) R & P
OIP3 vs. Supply Voltage
IA
@ Pout = +16 dBm / Tone Output IM3 @ Vdd = +8V
IN 48 70 46 60 44 S - L 42 50 R ) m c 40 (dB (dB 40 IE 3 3 38 IP IM +8V 36 +9V 30 +10V 2GHz LIF +11V 6GHz 34 10GHz P 20 14GHz 18GHz 32 22GHz M 30 10 A 0 4 8 12 16 20 24 10 12 14 16 18 20 22 FREQUENCY (GHz) Pout/TONE (dBm)
Output IM3 @ Vdd = +9V Output IM3 @ Vdd = +10V
70 70 60 60 50 ) c 50 ) c (dB 40 3 (dB IM 40 3 IM 30 2GHz 30 6GHz 10GHz 2GHz 6GHz 20 14GHz 10GHz 18GHz 22GHz 20 14GHz 18GHz 22GHz 10 10 12 14 16 18 20 22 10 10 12 14 16 18 20 22 Pout/TONE (dBm) Pout/TONE (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Reverse Isolation vs. Temperature Noise Figure vs. Frequency Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz Power Compression @ 2 GHz Power Dissipation Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs