Datasheet HMC797A (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC 1 Watt Power Amplifier, DC - 22 GHz |
| 页数 / 页 | 16 / 6 — HMC797A. GaAs PHEMT MMIC. 1 WATT POWER AMPLIFIER, DC - 22 GHz. Power … |
| 文件格式/大小 | PDF / 847 Kb |
| 文件语言 | 英语 |
HMC797A. GaAs PHEMT MMIC. 1 WATT POWER AMPLIFIER, DC - 22 GHz. Power Compression @ 22 GHz. PAE @ Psat vs. Frequency
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HMC797A
v02.0418
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 22 GHz PAE @ Psat vs. Frequency
36 520 30 32 505 25 (%) E 28 Pout 490 IP A Gain 24 PAE 475 ), P 20 H B I ) d (d 20 460 d (% IN (m 15 16 445 GA A PAE ) ), +25C m 12 430 10 +85C R - C B -55C (d t 8 415 E u o 5 Idd P 4 400 W 0 385 0 O 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 24 INPUT POWER (dBm) FREQUENCY (GHz) R & P
Power Dissipation @ 85 C Gain & Power vs. Vdd @ 2 GHz
A 35 5 E ) m IN ) 4.5 30 (dB (W at N s IO 4 ), P m 25 PAT S - L 3.5 (dB ISSI R Gain D 1dB 20 P1dB 2GHz ER 3 Psat 4 GHz ), P IE W 8 GHz 12 GHz (dB PO 16 GHz n 15 2.5 20 GHz 22 GHz ai G LIF 2 P 10 0 2 4 6 8 10 12 14 16 18 20 22 8 9 10 11 M INPUT POWER (dBm) Vdd (V) A
Gain & Power vs. Vdd @ 10 GHz Gain & Power vs. Vdd @ 22 GHz
35 35 ) m m 30 (dB 30 (dB at at s s ), P ), P m 25 m 25 (dB (dB Gain Gain 1dB 20 P1dB 1dB 20 P1dB Psat ), P Psat ), P (dB (dB n 15 n 15 ai ai G G 10 10 8 9 10 11 8 9 10 11 Vdd (V) Vdd (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
v02.0418
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 22 GHz PAE @ Psat vs. Frequency
36 520 30 32 505 25 (%) E 28 Pout 490 IP A Gain 24 PAE 475 ), P 20 H B I ) d (d 20 460 d (% IN (m 15 16 445 GA A PAE ) ), +25C m 12 430 10 +85C R - C B -55C (d t 8 415 E u o 5 Idd P 4 400 W 0 385 0 O 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 24 INPUT POWER (dBm) FREQUENCY (GHz) R & P
Power Dissipation @ 85 C Gain & Power vs. Vdd @ 2 GHz
A 35 5 E ) m IN ) 4.5 30 (dB (W at N s IO 4 ), P m 25 PAT S - L 3.5 (dB ISSI R Gain D 1dB 20 P1dB 2GHz ER 3 Psat 4 GHz ), P IE W 8 GHz 12 GHz (dB PO 16 GHz n 15 2.5 20 GHz 22 GHz ai G LIF 2 P 10 0 2 4 6 8 10 12 14 16 18 20 22 8 9 10 11 M INPUT POWER (dBm) Vdd (V) A
Gain & Power vs. Vdd @ 10 GHz Gain & Power vs. Vdd @ 22 GHz
35 35 ) m m 30 (dB 30 (dB at at s s ), P ), P m 25 m 25 (dB (dB Gain Gain 1dB 20 P1dB 1dB 20 P1dB Psat ), P Psat ), P (dB (dB n 15 n 15 ai ai G G 10 10 8 9 10 11 8 9 10 11 Vdd (V) Vdd (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
6
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs