Datasheet HMC906A (Analog Devices) - 7
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz |
| 页数 / 页 | 12 / 7 — HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. … |
| 文件格式/大小 | PDF / 601 Kb |
| 文件语言 | 英语 |
HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. Absolute Maximum Ratings. Reliabilty Information
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Absolute Maximum Ratings Reliabilty Information
Drain Bias Voltage (Vd) +7V Channel Temperature 175 °C ip rf input power (rfin) +20 dBm nominal Junction Temperature 134.2 °C H (T=85 °C, Vdd = 10V) Continuous pdiss (T= 85 °C) 13.18 w (derate 146.4 mw/°C above 85 °C) Thermal resistance 6.83 °C/w (channel to die bottom) storage Temperature -65 to +150 °C operating Temperature -55 to +85 °C Stresses at or above those listed in the Absolute Maximum r - C esD sensitivity (HBm) Class 0B - passed 150V e Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product w at these or any other conditions above those indicated in o the operational section of this specification is not implied. p Operation beyond the maximum operating condition for extended periods may affect product reliability. r & A eleCTrosTATiC sensiTiVe DeViCe e oBserVe HAnDlinG preCAUTions lin s - r ie lif p m A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Absolute Maximum Ratings Reliabilty Information
Drain Bias Voltage (Vd) +7V Channel Temperature 175 °C ip rf input power (rfin) +20 dBm nominal Junction Temperature 134.2 °C H (T=85 °C, Vdd = 10V) Continuous pdiss (T= 85 °C) 13.18 w (derate 146.4 mw/°C above 85 °C) Thermal resistance 6.83 °C/w (channel to die bottom) storage Temperature -65 to +150 °C operating Temperature -55 to +85 °C Stresses at or above those listed in the Absolute Maximum r - C esD sensitivity (HBm) Class 0B - passed 150V e Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product w at these or any other conditions above those indicated in o the operational section of this specification is not implied. p Operation beyond the maximum operating condition for extended periods may affect product reliability. r & A eleCTrosTATiC sensiTiVe DeViCe e oBserVe HAnDlinG preCAUTions lin s - r ie lif p m A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram