Datasheet HMC1121 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | 4 W, GaAs, pHEMT, MMIC Power Amplifier, 5.5 GHz to 8.5 GHz |
| 页数 / 页 | 15 / 10 — HMC1121. Data Sheet. 5.5GHz 7.0GHz 8.5GHz. Bm) d. AT S. , P. (V) T. 0.1. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 393 Kb |
| 文件语言 | 英语 |
HMC1121. Data Sheet. 5.5GHz 7.0GHz 8.5GHz. Bm) d. AT S. , P. (V) T. 0.1. B (. – V. F RE. B) d. N (. 0.01. GAIN. P1dB PSAT. 0.001. 6.0. 6.5. 7.0. 7.5. 8.0. –10
该数据表的模型线
文件文字版本
HMC1121 Data Sheet 40 10 5.5GHz 7.0GHz 8.5GHz Bm) d 35 ( 1 AT S , P (V) T Bm) d DE 30 0.1 B ( – V 1d F RE , P V B) d 25 N ( 0.01 AI GAIN G P1dB PSAT 20 0.001 6.0 6.5 7.0 7.5 8.0
027
–10 0 10 20 30 40
030
VDD (V)
13529-
OUTPUT POWER (dBm)
13529- Figure 27. Gain, P1dB, and PSAT vs. Supply Voltage (VDD) at 7 GHz Figure 30. Detector Voltage (VREF − VDET) vs. Output Power at Various Frequencies
20 10 +85°C +25°C 18 –40°C ) 1 (W N IO T 16 (V) T PA DE 0.1 ISSI – V D F 14 ER REV W PO 0.01 12 5.5GHz 6.5GHz 7.5GHz 8.5GHz 10 0.001 –14 –12 –10 –8 –6 –4 –2 0 2 4 6 8 10 12
028
–10 0 10 20 30 40
031
INPUT POWER (dBm)
13529-
OUTPUT POWER (dBm)
13529- Figure 28. Power Dissipation vs. Input Power at TA = 85°C Figure 31. Detector Voltage (VREF − VDET) vs. Output Power at Various Temperatures, at 7 GHz
0 +85°C –10 +25°C –40°C ) –20 B (d N –30 IO T A –40 L SO –50 SE I –60 EVER R –70 –80 –90 5 6 7 8 9
029
FREQUENCY (GHz)
13529- Figure 29. Reverse Isolation vs. Frequency at Various Temperatures Rev. A | Page 10 of 15 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequence During Power-Up During Power-Down Typical Application Circuit Evaluation Board Bill of Materials Evaluation Board Schematic Outline Dimensions Ordering Guide
027
–10 0 10 20 30 40
030
VDD (V)
13529-
OUTPUT POWER (dBm)
13529- Figure 27. Gain, P1dB, and PSAT vs. Supply Voltage (VDD) at 7 GHz Figure 30. Detector Voltage (VREF − VDET) vs. Output Power at Various Frequencies
20 10 +85°C +25°C 18 –40°C ) 1 (W N IO T 16 (V) T PA DE 0.1 ISSI – V D F 14 ER REV W PO 0.01 12 5.5GHz 6.5GHz 7.5GHz 8.5GHz 10 0.001 –14 –12 –10 –8 –6 –4 –2 0 2 4 6 8 10 12
028
–10 0 10 20 30 40
031
INPUT POWER (dBm)
13529-
OUTPUT POWER (dBm)
13529- Figure 28. Power Dissipation vs. Input Power at TA = 85°C Figure 31. Detector Voltage (VREF − VDET) vs. Output Power at Various Temperatures, at 7 GHz
0 +85°C –10 +25°C –40°C ) –20 B (d N –30 IO T A –40 L SO –50 SE I –60 EVER R –70 –80 –90 5 6 7 8 9
029
FREQUENCY (GHz)
13529- Figure 29. Reverse Isolation vs. Frequency at Various Temperatures Rev. A | Page 10 of 15 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequence During Power-Up During Power-Down Typical Application Circuit Evaluation Board Bill of Materials Evaluation Board Schematic Outline Dimensions Ordering Guide