Datasheet HMC637ASCPZ-EP (Analog Devices) - 7

制造商Analog Devices
描述GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz
页数 / 页9 / 7 — Enhanced Product. HMC637ASCPZ-EP. TYPICAL PERFORMANCE CHARACTERISTICS. …
文件格式/大小PDF / 240 Kb
文件语言英语

Enhanced Product. HMC637ASCPZ-EP. TYPICAL PERFORMANCE CHARACTERISTICS. +105°C. +25°C. –55°C. –10. –15. URN L. –20. INP. UT O. –25. –30

Enhanced Product HMC637ASCPZ-EP TYPICAL PERFORMANCE CHARACTERISTICS +105°C +25°C –55°C –10 –15 URN L –20 INP UT O –25 –30

该数据表的模型线

文件文字版本

Enhanced Product HMC637ASCPZ-EP TYPICAL PERFORMANCE CHARACTERISTICS 0 0 –5 –5 +105°C +105°C B) B) +25°C d +25°C d –55°C ( –55°C ( S S –10 S –10 S O O –15 URN L –15 URN L T T RE RE –20 UT UT –20 P INP UT O –25 –25 –30 –30 0 2 4 6 8
010
0 2 4 6 8
013
FREQUENCY (GHz)
20371-
FREQUENCY (GHz)
20371- Figure 10. Input Return Loss vs. Frequency at Various Temperatures Figure 13. Output Return Loss vs. Frequency at Various Temperatures
0 24 22 –10 +105°C 20 ) B +25°C –55°C 18 (d ) +105°C N –20 dB 16 +25°C IO ( T E –55°C A R L 14 –30 SO FIGU 12 E SE I 10 –40 OIS N EVER 8 R –50 6 4 –60 2
11
0 2 4 6 8
0
0 2 4 6 8
014
FREQUENCY (GHz)
20371-
FREQUENCY (GHz)
20371- Figure 11. Reverse Isolation vs. Frequency at Various Temperatures Figure 14. Noise Figure vs. Frequency at Various Temperatures
18 32 16 30 14 12 28 B) 10 d Bm) d +105°C N ( +105°C 26 +25°C B ( AI 8 +25°C –55°C G 1d –55°C P 6 24 4 22 2 0 20 0 2 4 6 8
012
0 2 4 6 8
015
FREQUENCY (GHz)
20371-
FREQUENCY (GHz)
20371- Figure 12. Gain vs. Frequency at Various Temperatures Figure 15. P1dB vs. Frequency at Various Temperatures Rev. 0 | Page 7 of 9 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER DERATING CURVES ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE