Datasheet HMC659 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz |
| 页数 / 页 | 8 / 1 — HMC659. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Typical … |
| 文件格式/大小 | PDF / 614 Kb |
| 文件语言 | 英语 |
HMC659. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC659
v02.0217
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features
The HMC659 is ideal for: P1dB Output Power: +26.5 dBm IP • Telecom Infrastructure Gain: 19 dB H • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300mA R - C • Test Instrumentation 50 Ohm Matched Input/Output E • Fiber Optics Die Size: 3.115 x 1.630 x 0.1 mm W O
Functional Diagram General Description
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, R & P A +35 dBm output IP3 and +26.5 dBm of output power E at 1 dB gain compression while requiring 300mA from a +8V supply. Gain flatness is excel ent at ±0.5 IN dB from DC to 10 GHz making the HMC659 ideal for EW, ECM, Radar and test equipment applications. The HMC659 amplifier I/Os are internal y matched S - L to 50 Ohms facilitating integration into Mutli-Chip- R Modules (MCMs). All data is taken with the chip IE connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). LIF P M A
Electrical Specifications, T = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 6 6 - 11 11 - 15 GHz Gain 16.1 19.1 15.5 18.5 14.8 17.8 dB Gain Flatness ±0.5 ±0.15 ±0.6 dB Gain Variation Over Temperature 0.013 0.018 0.025 dB/ °C Input Return Loss 19 17 15 dB Output Return Loss 18 17 15 dB Output Power for 1 dB Compression (P1dB) 23 25.5 24 26.5 22.5 25 dBm Saturated Output Power (Psat) 26 27 27 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 2.5 2 3 dBc Supply Current 300 300 300 mA (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 300mA typical. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v02.0217
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features
The HMC659 is ideal for: P1dB Output Power: +26.5 dBm IP • Telecom Infrastructure Gain: 19 dB H • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300mA R - C • Test Instrumentation 50 Ohm Matched Input/Output E • Fiber Optics Die Size: 3.115 x 1.630 x 0.1 mm W O
Functional Diagram General Description
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, R & P A +35 dBm output IP3 and +26.5 dBm of output power E at 1 dB gain compression while requiring 300mA from a +8V supply. Gain flatness is excel ent at ±0.5 IN dB from DC to 10 GHz making the HMC659 ideal for EW, ECM, Radar and test equipment applications. The HMC659 amplifier I/Os are internal y matched S - L to 50 Ohms facilitating integration into Mutli-Chip- R Modules (MCMs). All data is taken with the chip IE connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). LIF P M A
Electrical Specifications, T = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 6 6 - 11 11 - 15 GHz Gain 16.1 19.1 15.5 18.5 14.8 17.8 dB Gain Flatness ±0.5 ±0.15 ±0.6 dB Gain Variation Over Temperature 0.013 0.018 0.025 dB/ °C Input Return Loss 19 17 15 dB Output Return Loss 18 17 15 dB Output Power for 1 dB Compression (P1dB) 23 25.5 24 26.5 22.5 25 dBm Saturated Output Power (Psat) 26 27 27 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 2.5 2 3 dBc Supply Current 300 300 300 mA (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 300mA typical. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D