Datasheet HMC457QS16G, 457QS16GE (Analog Devices) - 6

HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Power Dissipation Absolute Maximum Ratings
3 Col ector Bias Voltage (Vcc) +6 Vdc Max Pdiss @ +85C 2.8 Control Voltage (Vpd) +5.4 Vdc 2.6 RF Input Power (RFIN)(Vs = Vpd = +5 Vdc) +15 dBm 1900 MHz 2.4 Junction Temperature 150 °C 2.2 Continuous Pdiss (T = 85 °C) 2 (derate 42.9 mW/°C above 85 °C) 2.78 W 1.8 2100 MHz Thermal Resistance 1.6 (junction to ground paddle) 23.3 °C/W 11 POWER DISSIPATION (W) 1.4 Storage Temperature -65 to +150 °C 1.2 Operating Temperature -40 to +85 °C 1 T -10 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - SM
Typical Supply Current
S
vs. Supply Voltage
Vs (V) Icq (mA) 4.5 400 5.0 510 5.5 620 PLIFIER M ER A W O & P R A E LIN Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
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