Datasheet HMC409LP4E (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz |
| 页数 / 页 | 8 / 4 — HMC409LP4E. GaAs InGaP HBT 1 WATT. POWER AMPLIFIER, 3.3 - 3.8 GHz |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
HMC409LP4E. GaAs InGaP HBT 1 WATT. POWER AMPLIFIER, 3.3 - 3.8 GHz
该数据表的模型线
文件文字版本
HMC409LP4E
v04.1217
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Power Dissipation
40 800 4.4 ) m 35 700 B d ) 4 T t ( 30 600 Max Pdiss @ +85C a (W s N m IO 3.6 ), P 25 500 m Ic s B c PAT d 20 400 ( Icc m 3.2 B ISSI d A 1 ) 15 300 D ER 2.8 r - ), P B d 10 200 W e ( Gain PO Psat IN 2.4 A 5 P1dB 100 G w 0 0 2 o 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 -20 -16 -12 -8 -4 0 4 8 p Vpd (Vdc) INPUT POWER (dBm) r &
EVM vs. Temperature @ 3.5 GHz OFDM
A
54 Mbps Signal
e 14 ) (% 12 lin UDE 10 IT +25 C N +85 C G A 8 -40 C s - M R r O 6 CT E ie V 4 R O RR 2 lif E p 0 10 12 14 16 18 20 22 24 26 28 30 m OUTPUT POWER (dBm) A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal Power Dissipation Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Noise Figure vs. Temperature Gain & Power vs. Supply Voltage Power Compression @ 3.5 GHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Power Down Isolation vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Absolute Maximum Ratings Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Outline Drawing Package Information Application Circuit Pin Descriptions Evaluation PCB List of Materials
v04.1217
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Power Dissipation
40 800 4.4 ) m 35 700 B d ) 4 T t ( 30 600 Max Pdiss @ +85C a (W s N m IO 3.6 ), P 25 500 m Ic s B c PAT d 20 400 ( Icc m 3.2 B ISSI d A 1 ) 15 300 D ER 2.8 r - ), P B d 10 200 W e ( Gain PO Psat IN 2.4 A 5 P1dB 100 G w 0 0 2 o 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 -20 -16 -12 -8 -4 0 4 8 p Vpd (Vdc) INPUT POWER (dBm) r &
EVM vs. Temperature @ 3.5 GHz OFDM
A
54 Mbps Signal
e 14 ) (% 12 lin UDE 10 IT +25 C N +85 C G A 8 -40 C s - M R r O 6 CT E ie V 4 R O RR 2 lif E p 0 10 12 14 16 18 20 22 24 26 28 30 m OUTPUT POWER (dBm) A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal Power Dissipation Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Noise Figure vs. Temperature Gain & Power vs. Supply Voltage Power Compression @ 3.5 GHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Power Down Isolation vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Absolute Maximum Ratings Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Outline Drawing Package Information Application Circuit Pin Descriptions Evaluation PCB List of Materials