Datasheet HMC464 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| 页数 / 页 | 6 / 3 — HMC464. GaAs PHEMT MMIC. POWER AMPLIFIER, 2 - 20 GHz. Output P1dB vs. … |
| 文件格式/大小 | PDF / 347 Kb |
| 文件语言 | 英语 |
HMC464. GaAs PHEMT MMIC. POWER AMPLIFIER, 2 - 20 GHz. Output P1dB vs. Temperature. Output Psat vs. Temperature
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HMC464
v04.0308
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Output P1dB vs. Temperature Output Psat vs. Temperature
30 30 28 26 26 3 24 22 22 20 +25C +25C 18 P1dB (dBm) +85C Psat (dBm) 18 +85C -55C IP 16 -55C H 14 14 12 10 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 S - C FREQUENCY (GHz) FREQUENCY (GHz) R IE
Gain, Power & Output IP3
IF
Output IP3 vs. Temperature vs. Supply Voltage @ 10 GHz, Fixed Vgg
L ) 32 36 P 30 M 28 32 26 24 R A 28 22 Gain Psat (dBm), IP3 (dBm E 20 P1dB +25C Psat IP3 (dBm) 24 +85C 18 IP3 W -55C 16 O 20 14 12 10 16 7.5 8 8.5 0 2 4 6 8 10 12 14 16 18 20 22 GAIN (dB), P1dB (dBm), R & P Vdd SUPPLY VOLTAGE (V) FREQUENCY (GHz) A E IN
Absolute Maximum Ratings Typical Supply Current vs. Vdd
L Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2 to 0 Vdc +7.5 292 Gate Bias Voltage (Vgg2) (Vdd -8) Vdc to Vdd +8.0 290 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm +8.5 288 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 4.64 W ELECTROSTATIC SENSITIVE DEVICE (derate 51.5 mW/°C above 85 °C) OBSERVE HANDLING PRECAUTIONS Thermal Resistance 19.4 °C/W (channel to die bottom)
Die Packaging Information
[1] Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Standard Alternate ESD Sensitivity (HBM) Class 1A GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 38
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v04.0308
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Output P1dB vs. Temperature Output Psat vs. Temperature
30 30 28 26 26 3 24 22 22 20 +25C +25C 18 P1dB (dBm) +85C Psat (dBm) 18 +85C -55C IP 16 -55C H 14 14 12 10 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 S - C FREQUENCY (GHz) FREQUENCY (GHz) R IE
Gain, Power & Output IP3
IF
Output IP3 vs. Temperature vs. Supply Voltage @ 10 GHz, Fixed Vgg
L ) 32 36 P 30 M 28 32 26 24 R A 28 22 Gain Psat (dBm), IP3 (dBm E 20 P1dB +25C Psat IP3 (dBm) 24 +85C 18 IP3 W -55C 16 O 20 14 12 10 16 7.5 8 8.5 0 2 4 6 8 10 12 14 16 18 20 22 GAIN (dB), P1dB (dBm), R & P Vdd SUPPLY VOLTAGE (V) FREQUENCY (GHz) A E IN
Absolute Maximum Ratings Typical Supply Current vs. Vdd
L Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2 to 0 Vdc +7.5 292 Gate Bias Voltage (Vgg2) (Vdd -8) Vdc to Vdd +8.0 290 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm +8.5 288 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 4.64 W ELECTROSTATIC SENSITIVE DEVICE (derate 51.5 mW/°C above 85 °C) OBSERVE HANDLING PRECAUTIONS Thermal Resistance 19.4 °C/W (channel to die bottom)
Die Packaging Information
[1] Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Standard Alternate ESD Sensitivity (HBM) Class 1A GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 38
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D