Datasheet HMC980LP4E (Analog Devices) - 8

制造商Analog Devices
描述ACTIVE BIAS CONTROLLER HIGH CURRENT
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HMC980LP4E. ACTIVE BIAS CONTROLLER. HIGH CURRENT. Absolute Maximum Ratings. Outline Drawing. Package Information

HMC980LP4E ACTIVE BIAS CONTROLLER HIGH CURRENT Absolute Maximum Ratings Outline Drawing Package Information

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HMC980LP4E
v01.0911
ACTIVE BIAS CONTROLLER HIGH CURRENT Absolute Maximum Ratings
VDD 18V Thermal Resistance (R ) TH 10.6 °C/W (Junction to package bottom) S0, S1, EN, ALM, VREF, VNEGFB, VGATEFB, TRIG_OUT, ISENSE, -0.5V to VDIG + 0.5V Storage Temperature -65 to +150 °C T ALML, ISET, ALMH, FIXBIAS Operating Temperature -40 to +85 °C M CP_VDD VDD-0.5V to VDD+0.5V ESD Sensitivity (HBM) Class 1A CP_OUT, VG2_CONT, VG2, VDRAIN -0.5V to VDD + 0.5V Note that there are two different voltage domains on VDIG 5.5V HMC980LP4E; a high voltage domain Vdd, and a low voltage T - S domain VDIG. Take necessary precautions not to violate ABS VNEG -4V to GND MAX ratings of each subdomains. N VGATE VNEG to GND E Junction Temperature 125 °C M Continuous Pdiss (T = 85 °C) E 3.8 Watt (Derate 94.79 mW/°C above 85 °C) G A N ELECTROSTATIC SENSITIVE DEVICE A OBSERVE HANDLING PRECAUTIONS R M
Outline Drawing
E W O C P D NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1] HMC980LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H980 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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Order On-line at www.hittite.com Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Bias Current Accuracy[1] Bias Current Accuracy[2] Power Up Waveform Shutdown Waveform Enable Waveform Disable Waveform Load Regulation @ VDD=5V, VDIG=3.3V, SW0=GND, SW1=GND Load Regulation @ VDD=5V, VDIG=3.3V, SW0=3.3V, SW1=GND Load Regulation @ VDD=16.5V, VDIG=5.0V, SW0=GND, SW1=VDIG Load Regulation @ VDD=16.5V, VDIG=5.0V, SW0=VDIG, SW1=VDIG VNEG Load Regulation @ VDD=5V VNEG Load Regulation @ VDD=16.5V VNEG Load Transient VDD=5V VNEG Load Transient VDD=16.5V VGATE Load Regulation @ VDD=12V [1] VG2 Load Regulation @ VDD=12V [2] VNEG Line Regulation vs. Supply Voltage Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions Evaluation Board Circuit Evaluation PCB List of Materials for Evaluation PCB Application Notes Detailed Description Digital Power Supply (VDIG) Supply and Drain Voltage (VDD and VDRAIN) Table 1. REcommended Current Range Configuration Negative Voltage Generator (VNEGOUT) Enable/Disable (EN) Active Bias Control Loop VG2 Voltage Adjustment Self Protection Feature VNEG Fault Detection Feature Over/Under Current Alarm Power-up and Enable Sequencing Daisy-Chain Operation Operation Modes Table 2 - The List of Bias Settings for Various Hittite Amplifiers Table 3 - List of Bias Settings for Various Hittite Amplifiers