Datasheet C2M1000170J (Wolfspeed) - 6
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω |
| 页数 / 页 | 10 / 6 — Typical Performance. Conditions:. (A). TJ ≤ 150 °C. (DC. (W 70. er, P tot … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
Typical Performance. Conditions:. (A). TJ ≤ 150 °C. (DC. (W 70. er, P tot 60. issipated Pow. D 30. um 20. in-Source Continous Current, I DS
该数据表的模型线
文件文字版本
Typical Performance 6 90 Conditions: Conditions: (A) TJ ≤ 150 °C 80 TJ ≤ 150 °C ) 5 ) (DC (W 70 4 er, P tot 60 50 3 40 issipated Pow 2 D 30 um 20 1 in-Source Continous Current, I DS axim M Dra 10 0 0 -55 -30 -5 20 45 70 95 120 145 -55 -30 -5 20 45 70 95 120 145 Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
10.00 1 ) 0.5 W 10 µs C/ Limited by RDS On o ( 0.3 (A) 100 µs 1.00 1 ms nce, Z thJC 100E-3 0.1 nt, I DS 100 ms da 0.05 pe 0.02 SinglePulse o Case Im 0.01 0.10 10E-3 in-Source Curre Dra ction T Conditions: T Jun C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area
90 50 Conditions: Conditions: 80 TJ = 25 °C 45 TJ = 25 °C VDD = 1200 V VDD = 900 V 70 RG(ext) = 2.5 Ω 40 RG(ext) = 2.5 Ω VGS = -5V/+20 V VGS = -5V/+20 V FWD = C2M1000170J FWD = C2M1000170J 60 E 35 Total L = 1368 μH L = 1368 μH ETotal 30 50 25 40 EOn E 20 On itching Loss (uJ) 30 itching Loss (uJ) Sw 15 Sw 20 E E 10 Off Off 10 5 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Drain to Source Current,IDS(A) Drain to Source Current,IDS(A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 1200 V) Drain Current (V = 900 V) DD DD
6
C2M1000170J Rev. B, 12-2017
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
10.00 1 ) 0.5 W 10 µs C/ Limited by RDS On o ( 0.3 (A) 100 µs 1.00 1 ms nce, Z thJC 100E-3 0.1 nt, I DS 100 ms da 0.05 pe 0.02 SinglePulse o Case Im 0.01 0.10 10E-3 in-Source Curre Dra ction T Conditions: T Jun C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area
90 50 Conditions: Conditions: 80 TJ = 25 °C 45 TJ = 25 °C VDD = 1200 V VDD = 900 V 70 RG(ext) = 2.5 Ω 40 RG(ext) = 2.5 Ω VGS = -5V/+20 V VGS = -5V/+20 V FWD = C2M1000170J FWD = C2M1000170J 60 E 35 Total L = 1368 μH L = 1368 μH ETotal 30 50 25 40 EOn E 20 On itching Loss (uJ) 30 itching Loss (uJ) Sw 15 Sw 20 E E 10 Off Off 10 5 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Drain to Source Current,IDS(A) Drain to Source Current,IDS(A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 1200 V) Drain Current (V = 900 V) DD DD
6
C2M1000170J Rev. B, 12-2017