Datasheet C2M0045170P (Wolfspeed) - 2
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| 页数 / 页 | 10 / 2 — Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test Conditions. Note. Reverse Diode Characteristics
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Electrical Characteristics
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.6 4 V V V DS = VGS, ID = 18mA GS(th) Gate Threshold Voltage Fig. 11 1.8 V VDS = VGS, ID = 18mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1700 V, VGS = 0 V IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V 45 59 V R GS = 20 V, ID = 50 A Fig. DS(on) Drain-Source On-State Resistance mΩ 4,5,6 90 VGS = 20 V, ID = 50 A, TJ = 150 °C 21.7 V g DS= 20 V, IDS= 50 A fs Transconductance S Fig. 7 24.4 VDS= 20 V, IDS= 50 A, TJ = 150 °C Ciss Input Capacitance 3672 VGS = 0 V Coss Output Capacitance 171 pF Fig. VDS = 1000 V 17,18 Crss Reverse Transfer Capacitance 6.7 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 105 μJ Fig 16 E V ON Turn-On Switching Energy (SiC Diode FWD) 0.67 DS = 1200 V, VGS = -5/20 V, mJ Fig. 26, I = 50A, R = 2.5Ω, L= 105 μH, D G(ext) 29b EOFF Turn Off Switching Energy (SiC Diode FWD) 0.31 TJ = 150 °C, using SiC Diode as FWD E V ON Turn-On Switching Energy (Body Diode FWD) 2.8 DS = 1200 V, VGS = -5/20 V, mJ Fig. 26, I = 50A, R = 2.5Ω, L= 105 μH, D G(ext) 29a EOFF Turn Off Switching Energy (Body Diode FWD) 0.35 TJ = 150 °C, using MOSFET as FWD td(on) Turn-On Delay Time 35 VDD = 1200 V, VGS = -5/20 V t ID = 50 A, r Rise Time 13 ns R Fig. 27, G(ext) = 2.5 Ω, Timing relative to V DS 29 td(off) Turn-Off Delay Time 46 Inductive load tf Fall Time 10 RG(int) Internal Gate Resistance 1.3 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 44 VDS = 1200 V, VGS = -5/20 V Qgd Gate to Drain Charge 57 nC ID = 50 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 188
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
4.1 V V = - 5 V, I = 25 A Fig. 8, 9, V GS SD SD Diode Forward Voltage 10 3.6 V V = - 5 V, I = 25 A, T = 150 °C Note 1 GS SD J IS Continuous Diode Forward Current 72 A T = 25 °C, V = - 5 V Note 1 C GS t Reverse Recovery Time 44 ns rr V = - 5 V, I = 50 A , V = 1200 V GS SD R Q Reverse Recovery Charge 2 µC rr dif/dt = 3000 A/µs Note 1 I Peak Reverse Recovery Current 60 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.22 0.24 Fig. 21 °C/W RθJC Thermal Resistance from Junction to Ambient 40
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C2M0045170P Rev. -, 04-2018
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.6 4 V V V DS = VGS, ID = 18mA GS(th) Gate Threshold Voltage Fig. 11 1.8 V VDS = VGS, ID = 18mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1700 V, VGS = 0 V IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V 45 59 V R GS = 20 V, ID = 50 A Fig. DS(on) Drain-Source On-State Resistance mΩ 4,5,6 90 VGS = 20 V, ID = 50 A, TJ = 150 °C 21.7 V g DS= 20 V, IDS= 50 A fs Transconductance S Fig. 7 24.4 VDS= 20 V, IDS= 50 A, TJ = 150 °C Ciss Input Capacitance 3672 VGS = 0 V Coss Output Capacitance 171 pF Fig. VDS = 1000 V 17,18 Crss Reverse Transfer Capacitance 6.7 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 105 μJ Fig 16 E V ON Turn-On Switching Energy (SiC Diode FWD) 0.67 DS = 1200 V, VGS = -5/20 V, mJ Fig. 26, I = 50A, R = 2.5Ω, L= 105 μH, D G(ext) 29b EOFF Turn Off Switching Energy (SiC Diode FWD) 0.31 TJ = 150 °C, using SiC Diode as FWD E V ON Turn-On Switching Energy (Body Diode FWD) 2.8 DS = 1200 V, VGS = -5/20 V, mJ Fig. 26, I = 50A, R = 2.5Ω, L= 105 μH, D G(ext) 29a EOFF Turn Off Switching Energy (Body Diode FWD) 0.35 TJ = 150 °C, using MOSFET as FWD td(on) Turn-On Delay Time 35 VDD = 1200 V, VGS = -5/20 V t ID = 50 A, r Rise Time 13 ns R Fig. 27, G(ext) = 2.5 Ω, Timing relative to V DS 29 td(off) Turn-Off Delay Time 46 Inductive load tf Fall Time 10 RG(int) Internal Gate Resistance 1.3 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 44 VDS = 1200 V, VGS = -5/20 V Qgd Gate to Drain Charge 57 nC ID = 50 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 188
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
4.1 V V = - 5 V, I = 25 A Fig. 8, 9, V GS SD SD Diode Forward Voltage 10 3.6 V V = - 5 V, I = 25 A, T = 150 °C Note 1 GS SD J IS Continuous Diode Forward Current 72 A T = 25 °C, V = - 5 V Note 1 C GS t Reverse Recovery Time 44 ns rr V = - 5 V, I = 50 A , V = 1200 V GS SD R Q Reverse Recovery Charge 2 µC rr dif/dt = 3000 A/µs Note 1 I Peak Reverse Recovery Current 60 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.22 0.24 Fig. 21 °C/W RθJC Thermal Resistance from Junction to Ambient 40
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C2M0045170P Rev. -, 04-2018