Datasheet C2M0045170P (Wolfspeed) - 3
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| 页数 / 页 | 10 / 3 — Typical Performance. 150. Conditions:. GS = 20 V. J = -40 °C. TJ = 25 °C. … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
Typical Performance. 150. Conditions:. GS = 20 V. J = -40 °C. TJ = 25 °C. 125. tp < 200 µs. GS = 18 V. VGS = 18 V. VGS = 14 V. (A). 100
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Typical Performance 150 150 Conditions: V Conditions: V T GS = 20 V GS = 20 V J = -40 °C TJ = 25 °C 125 tp < 200 µs tp < 200 µs V 125 GS = 18 V VGS = 18 V VGS = 14 V (A) V (A) V 100 GS = 16 V 100 GS = 16 V nt, I DS VGS = 14 V nt, I DS VGS = 12 V 75 75 VGS = 12 V 50 50 in-Source Curre in-Source Curre VGS = 10 V Dra V Dra 25 GS = 10 V 25 0 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -40 °C Figure 2. Output Characteristics TJ = 25 °C
150 2.5 Conditions: Conditions: TJ = 150 °C VGS = 20 V IDS = 50 A 125 tp < 200 µs VGS = 18 V VGS = 20 V 2.0 t V p < 200 µs (A) GS = 16 V .) V 100 GS = 14 V (P.U nt, I DS V n GS = 12 V O 1.5 75 VGS = 10 V 1.0 50 in-Source Curre Dra On Resistance, R DS 0.5 25 0 0.0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 -50 -25 0 25 50 75 100 125 150 Drain-Source Voltage, V Junction Temperature, T DS (V) J (°C)
Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
160 120 Conditions: Conditions: I 140 VGS = 20 V DS = 50 A tp < 200 µs 100 tp < 200 µs 120 s) s) Ohm T 80 100 J = 150 °C Ohm (m (m V n n GS = 14 V O 80 O 60 VGS = 16 V 60 TJ = 25 °C 40 VGS = 20 V 40 V T GS = 18 V J = -40 °C On Resistance, R DS 20 20 On Resistance, R DS 0 0 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M0045170P Rev. -, 04-2018
Figure 1. Output Characteristics TJ = -40 °C Figure 2. Output Characteristics TJ = 25 °C
150 2.5 Conditions: Conditions: TJ = 150 °C VGS = 20 V IDS = 50 A 125 tp < 200 µs VGS = 18 V VGS = 20 V 2.0 t V p < 200 µs (A) GS = 16 V .) V 100 GS = 14 V (P.U nt, I DS V n GS = 12 V O 1.5 75 VGS = 10 V 1.0 50 in-Source Curre Dra On Resistance, R DS 0.5 25 0 0.0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 -50 -25 0 25 50 75 100 125 150 Drain-Source Voltage, V Junction Temperature, T DS (V) J (°C)
Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
160 120 Conditions: Conditions: I 140 VGS = 20 V DS = 50 A tp < 200 µs 100 tp < 200 µs 120 s) s) Ohm T 80 100 J = 150 °C Ohm (m (m V n n GS = 14 V O 80 O 60 VGS = 16 V 60 TJ = 25 °C 40 VGS = 20 V 40 V T GS = 18 V J = -40 °C On Resistance, R DS 20 20 On Resistance, R DS 0 0 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M0045170P Rev. -, 04-2018