Datasheet C2M0045170P (Wolfspeed) - 6
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| 页数 / 页 | 10 / 6 — Typical Performance. 600. Conditions:. (A) 70. TJ ≤ 150 °C. ) 500. (DC. … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
Typical Performance. 600. Conditions:. (A) 70. TJ ≤ 150 °C. ) 500. (DC. er, P tot. 400. 300. issipated Pow D 200
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Typical Performance 80 600 Conditions: Conditions: (A) 70 TJ ≤ 150 °C TJ ≤ 150 °C ) ) 500 (DC (W 60 er, P tot 50 400 40 300 30 issipated Pow D 200 20 um in-Source Continous Current, I DS axim 10 100 M Dra 0 0 -55 -30 -5 20 45 70 95 120 145 -55 -30 -5 20 45 70 95 120 145 Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
) 100.00 10 µs W C/ 100E-3 Limited by RDS On 100 µs o ( 0.5 (A) 0.3 10.00 1 ms , I DS 100 ms 0.1 rent pedance, Z thJC 0.05 1.00 ce Cur 10E-3 0.02 in-Sour SinglePulse Dra 0.10 0.01 Conditions: T Junction To Case Im C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area
1.8 3.0 Conditions: Conditions: TJ = 25 °C TJ = 25 °C 1.5 VDD = 900 V VDD = 1200 V R 2.5 G(ext) = 2.5 Ω RG(ext) = 2.5 Ω VGS = -5V/+20 V ETotal V FWD = C2M0045170P GS = -5V/+20 V ETotal FWD = C2M0045170P 1.2 L = 130 μH J) 2.0 L = 130 μH J) (m (m 0.9 EOn 1.5 EOn itching Loss 0.6 itching Loss 1.0 Sw Sw EOff 0.3 0.5 EOff 0.0 0.0 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 900V) Drain Current (V = 1200V) DD DD
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C2M0045170P Rev. -, 04-2018
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
) 100.00 10 µs W C/ 100E-3 Limited by RDS On 100 µs o ( 0.5 (A) 0.3 10.00 1 ms , I DS 100 ms 0.1 rent pedance, Z thJC 0.05 1.00 ce Cur 10E-3 0.02 in-Sour SinglePulse Dra 0.10 0.01 Conditions: T Junction To Case Im C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area
1.8 3.0 Conditions: Conditions: TJ = 25 °C TJ = 25 °C 1.5 VDD = 900 V VDD = 1200 V R 2.5 G(ext) = 2.5 Ω RG(ext) = 2.5 Ω VGS = -5V/+20 V ETotal V FWD = C2M0045170P GS = -5V/+20 V ETotal FWD = C2M0045170P 1.2 L = 130 μH J) 2.0 L = 130 μH J) (m (m 0.9 EOn 1.5 EOn itching Loss 0.6 itching Loss 1.0 Sw Sw EOff 0.3 0.5 EOff 0.0 0.0 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 900V) Drain Current (V = 1200V) DD DD
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C2M0045170P Rev. -, 04-2018