Datasheet C2M0045170P (Wolfspeed) - 7
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| 页数 / 页 | 10 / 7 — Typical Performance. 6.0. 3.5. Conditions:. TJ = 25 °C. IDS = 20 A. 5.0. … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
Typical Performance. 6.0. 3.5. Conditions:. TJ = 25 °C. IDS = 20 A. 5.0. VDD = 1200 V. 3.0. IDS = 50 A. RG(ext) = 2.5 Ω. VGS = -5V/+20 V
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Typical Performance 6.0 3.5 Conditions: Conditions: TJ = 25 °C IDS = 20 A 5.0 VDD = 1200 V 3.0 VDD = 1200 V IDS = 50 A RG(ext) = 2.5 Ω VGS = -5V/+20 V V E GS = -5V/+20 V Total FWD = C2M0045170P 2.5 FWD = C2M0045170P 4.0 ETotal L = 130 μH J) J) (- - -)FWD = C3D25170H L = 130 μH (m (m 2.0 EOn 3.0 EOn 1.5 itching Loss 2.0 itching Loss ETotal Sw 1.0 Sw EOn 1.0 EOff 0.5 EOff EOff 0.0 0.0 0 5 10 15 20 25 0 25 50 75 100 125 150 175 External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
150 Conditions: TJ = 25 °C 125 VDD = 1200 V IDS = 50 A VGS = -5V/+20 V td(off) FWD = C2M0045170P 100 L = 130 μH es (ns) 75 td(on) 50 itching Tim tf Sw 25 tr 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M0045170P Rev. -, 04-2018
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
150 Conditions: TJ = 25 °C 125 VDD = 1200 V IDS = 50 A VGS = -5V/+20 V td(off) FWD = C2M0045170P 100 L = 130 μH es (ns) 75 td(on) 50 itching Tim tf Sw 25 tr 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M0045170P Rev. -, 04-2018