Datasheet BUK7S0R5-40H (Nexperia) - 6
| 制造商 | Nexperia |
| 描述 | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 |
| 页数 / 页 | 13 / 6 — Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in … |
| 修订版 | 06042021 |
| 文件格式/大小 | PDF / 326 Kb |
| 文件语言 | 英语 |
Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88. Symbol. Parameter. Conditions. Min. Typ. Max. Unit
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Nexperia BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 15116 21162 pF C T oss output capacitance j = 25 °C; Fig. 15 - 2718 3805 pF Crss reverse transfer - 544 1197 pF capacitance td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 40 - ns t R r rise time G(ext) = 5 Ω - 33 - ns td(of ) turn-of delay time - 117 - ns tf fall time - 48 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.79 1 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 62 - ns Q V r recovered charge DS = 20 V; Tj = 25 °C [1] - 93 - nC S softness factor - 0.83 - IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V; - 0.73 - VDS = 20 V; Tj = 25 °C [1] includes capacitive recovery aaa-032615 400 aaa-032616 4 ID RD R S D o S n o (A) A 5 5 V (m ( Ω m ) 320 VG V S G = = 5. 5 5 5 V 3 240 6 6 V 2 4. 4 5 . 5 V 160 10 1 0 V 1 80 4 4 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 25A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values
BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 6 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 15116 21162 pF C T oss output capacitance j = 25 °C; Fig. 15 - 2718 3805 pF Crss reverse transfer - 544 1197 pF capacitance td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 40 - ns t R r rise time G(ext) = 5 Ω - 33 - ns td(of ) turn-of delay time - 117 - ns tf fall time - 48 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.79 1 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 62 - ns Q V r recovered charge DS = 20 V; Tj = 25 °C [1] - 93 - nC S softness factor - 0.83 - IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V; - 0.73 - VDS = 20 V; Tj = 25 °C [1] includes capacitive recovery aaa-032615 400 aaa-032616 4 ID RD R S D o S n o (A) A 5 5 V (m ( Ω m ) 320 VG V S G = = 5. 5 5 5 V 3 240 6 6 V 2 4. 4 5 . 5 V 160 10 1 0 V 1 80 4 4 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 25A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values
BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 6 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents