Datasheet BUK7S0R5-40H (Nexperia) - 8
| 制造商 | Nexperia |
| 描述 | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 |
| 页数 / 页 | 13 / 8 — Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in … |
| 修订版 | 06042021 |
| 文件格式/大小 | PDF / 326 Kb |
| 文件语言 | 英语 |
Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
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Nexperia BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
aaa-026897 2.4 aaa-032620 10 a VGS (V ( ) V 2 8 1.6 6 1.2 32 3 2 V 4 0.8 VDS = 1 4 1 4 V 2 0.4 0 0 -60 -30 0 30 60 90 120 150 180 0 40 80 120 160 200 Tj (°C) QG (nC) Tj = 25 °C; ID = 25 A
Fig. 13. Gate-source voltage as a function of gate Fig. 12. Normalized drain-source on-state resistance charge; typical values factor as a function of junction temperature
aaa-032621 105 V C DS (p ( F p ) ID Ciss 104 VGS(pl) Coss o VGS(th) 103 V C GS rss QGS2 QGS1 102 QGS QGD 10-1 1 10 102 Q V G(tot) DS (V) 003aaa508 VGS = 0 V; f = 1 MHz
Fig. 14. Gate charge waveform definitions Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 8 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-026897 2.4 aaa-032620 10 a VGS (V ( ) V 2 8 1.6 6 1.2 32 3 2 V 4 0.8 VDS = 1 4 1 4 V 2 0.4 0 0 -60 -30 0 30 60 90 120 150 180 0 40 80 120 160 200 Tj (°C) QG (nC) Tj = 25 °C; ID = 25 A
Fig. 13. Gate-source voltage as a function of gate Fig. 12. Normalized drain-source on-state resistance charge; typical values factor as a function of junction temperature
aaa-032621 105 V C DS (p ( F p ) ID Ciss 104 VGS(pl) Coss o VGS(th) 103 V C GS rss QGS2 QGS1 102 QGS QGD 10-1 1 10 102 Q V G(tot) DS (V) 003aaa508 VGS = 0 V; f = 1 MHz
Fig. 14. Gate charge waveform definitions Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 8 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents