Datasheet MMBTA63, MMBTA64 (Diodes) - 3

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描述PNP Small Signal Transistor in SOT23
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MMBTA63 / MMBTA64. Electrical Characteristics. Characteristic. Symbol. Min. Max. Unit. Test Condition. OFF CHARACTERISTICS (Note 7)

MMBTA63 / MMBTA64 Electrical Characteristics Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7)

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MMBTA63 / MMBTA64 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Collector-Emitter Breakdown Voltage BVCEO -30  V IC = -100A, VBE = 0V Collector Cut-Off Current ICBO  -100 nA VCB = -30V, IE = 0 Emitter Cut-Off Current IEBO  -100 nA VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 7)
DC Current Gain MMBTA63 5,000 IC = -10mA, VCE = -5.0V MMBTA64 10,000 I h   C = -10mA, VCE = -5.0V MMBTA63 FE 10,000 IC = -100mA, VCE = -5.0V MMBTA64 20,000 IC = -100mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT)  -1.5 V IC = -100mA, IB = -100A Base-Emitter Saturation Voltage VBE(SAT)  -2.0 V IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
V Current Gain-Bandwidth Product f CE = -5.0V, IC = -10mA, T 125  MHz f = 100MHz Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBTA63 / MMBTA64 3 of 6 November 2018 Document number: DS30055 Rev. 9 - 2
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