Datasheet BAV70 (Diodes) - 2
| 制造商 | Diodes |
| 描述 | DUAL SURFACE MOUNT SWITCHING DIODE |
| 页数 / 页 | 5 / 2 — BAV70. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal … |
| 文件格式/大小 | PDF / 205 Kb |
| 文件语言 | 英语 |
BAV70. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Max. Test Condition
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BAV70 Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 6) IFM 300 mA Average Rectified Output Current (Note 6) IO 150 mA Repetitive Peak Forward Current IFRM 450 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs 2.0 I A @ t = 1.0s FSM 1.0
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 350 mW Thermal Resistance Junction to Ambient Air (Note 6) RθJA 357 °C/W Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 75 — V IR = 2.5µA 0.715 IF = 1.0mA 0.855 I Forward Voltage V F = 10mA F — V 1.0 IF = 50mA 1.25 IF = 150mA 2.5 µA VR = 75V 50 µA V Reverse Current (Note 7) I R = 75V, TJ = +150°C R — 30 µA VR = 25V, TJ = +150°C 25 nA VR = 20V Total Capacitance CT — 2.0 pF VR = 0, f = 1.0MHz I Reverse Recovery Time F = IR = 10mA, trr — 4.0 ns Irr = 0.1 × IR, RL = 100Ω Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. BAV70 2 of 5 August 2018 Document number: DS12006 Rev. 23 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Features Marking Information Package Outline Dimensions Suggested Pad Layout
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 6) IFM 300 mA Average Rectified Output Current (Note 6) IO 150 mA Repetitive Peak Forward Current IFRM 450 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs 2.0 I A @ t = 1.0s FSM 1.0
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 350 mW Thermal Resistance Junction to Ambient Air (Note 6) RθJA 357 °C/W Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 75 — V IR = 2.5µA 0.715 IF = 1.0mA 0.855 I Forward Voltage V F = 10mA F — V 1.0 IF = 50mA 1.25 IF = 150mA 2.5 µA VR = 75V 50 µA V Reverse Current (Note 7) I R = 75V, TJ = +150°C R — 30 µA VR = 25V, TJ = +150°C 25 nA VR = 20V Total Capacitance CT — 2.0 pF VR = 0, f = 1.0MHz I Reverse Recovery Time F = IR = 10mA, trr — 4.0 ns Irr = 0.1 × IR, RL = 100Ω Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. BAV70 2 of 5 August 2018 Document number: DS12006 Rev. 23 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Features Marking Information Package Outline Dimensions Suggested Pad Layout