Datasheet TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) (ON Semiconductor) - 2

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS TIP120, TIP121, TIP122, Rating Symbol TIP125 TIP126 TIP127 Unit
Collector−Emitter Voltage VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 5.0 Adc − Peak 8.0 Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C PD 65 W Derate above 25°C 0.52 W/°C Total Power Dissipation @ TA = 25°C PD 2.0 W Derate above 25°C 0.016 W/°C Unclamped Inductive Load Energy (Note 1) E 50 mJ Operating and Storage Junction, Temperature Range TJ, Tstg –65 to +150 °C
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) TIP120, TIP125 60 − TIP121, TIP126 80 − TIP122, TIP127 100 − Collector Cutoff Current ICEO mAdc (VCE = 30 Vdc, IB = 0) TIP120, TIP125 − 0.5 (VCE = 40 Vdc, IB = 0) TIP121, TIP126 − 0.5 (VCE = 50 Vdc, IB = 0) TIP122, TIP127 − 0.5 Collector Cutoff Current ICBO mAdc (VCB = 60 Vdc, IE = 0) TIP120, TIP125 − 0.2 (VCB = 80 Vdc, IE = 0) TIP121, TIP126 − 0.2 (VCB = 100 Vdc, IE = 0) TIP122, TIP127 − 0.2 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc
ON CHARACTERISTICS
(Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) hFE 1000 − − (IC = 3.0 Adc, VCE = 3.0 Vdc) 1000 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 3.0 Adc, IB = 12 mAdc) − 2.0 (IC = 5.0 Adc, IB = 20 mAdc) − 4.0 Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.5 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127 Cob − 300 pF TIP120, TIP121, TIP122 − 200 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
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