Datasheet BC182, BC182A, BC182B (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Amplifier Transistors NPN Silicon |
| 页数 / 页 | 4 / 2 — BC182, BC182A, BC182B. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 修订版 | 5 |
| 文件格式/大小 | PDF / 56 Kb |
| 文件语言 | 英语 |
BC182, BC182A, BC182B. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BC182, BC182A, BC182B ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO V (IC = 2.0 mA, IB = 0) 50 − − Collector −Base Breakdown Voltage V(BR)CBO V (IC = 10 mA, IE = 0) 60 − − Emitter −Base Breakdown Voltage V(BR)EBO V (IE = 100 mA, IC = 0) 6.0 − − Collector Cutoff Current ICBO nA (VCB = 50 V, VBE = 0) − 0.2 15 Emitter−Base Leakage Current IEBO nA (VEB = 4.0 V, IC = 0) − − 15
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 10 mA, VCE = 5.0 V) BC182 40 − − (IC = 2.0 mA, VCE = 5.0 V) BC182 120 − 500 BC182A 120 220 BC182B 180 − 500 (IC = 100 mA, VCE = 5.0 V) BC182 80 − Collector −Emitter On Voltage VCE(sat) V (IC = 10 mA, IB = 0.5 mA) − 0.07 0.25 (IC = 100 mA, IB = 5.0 mA) (Note 1) − 0.2 0.6 Base −Emitter Saturation Voltage VBE(sat) − − 1.2 V (IC = 100 mA, IB = 5.0 mA) (Note 1) Base−Emitter On Voltage VBE(on) V (IC = 100 mA, VCE = 5.0 V) − 0.5 − (IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7 (IC = 100 mA, VCE = 5.0 V) (Note 1) − 0.83 −
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product fT MHz (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) − 100 − (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 150 200 − Common Base Output Capacitance Cob − − 5.0 pF (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance Cib − 8.0 − pF (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small−Signal Current Gain hfe − (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182 125 − 500 BC182A 125 − 260 BC182B 240 − 500 Noise Figure NF dB (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz) − 2.0 10 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
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BC182, BC182A, BC182B ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO V (IC = 2.0 mA, IB = 0) 50 − − Collector −Base Breakdown Voltage V(BR)CBO V (IC = 10 mA, IE = 0) 60 − − Emitter −Base Breakdown Voltage V(BR)EBO V (IE = 100 mA, IC = 0) 6.0 − − Collector Cutoff Current ICBO nA (VCB = 50 V, VBE = 0) − 0.2 15 Emitter−Base Leakage Current IEBO nA (VEB = 4.0 V, IC = 0) − − 15
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 10 mA, VCE = 5.0 V) BC182 40 − − (IC = 2.0 mA, VCE = 5.0 V) BC182 120 − 500 BC182A 120 220 BC182B 180 − 500 (IC = 100 mA, VCE = 5.0 V) BC182 80 − Collector −Emitter On Voltage VCE(sat) V (IC = 10 mA, IB = 0.5 mA) − 0.07 0.25 (IC = 100 mA, IB = 5.0 mA) (Note 1) − 0.2 0.6 Base −Emitter Saturation Voltage VBE(sat) − − 1.2 V (IC = 100 mA, IB = 5.0 mA) (Note 1) Base−Emitter On Voltage VBE(on) V (IC = 100 mA, VCE = 5.0 V) − 0.5 − (IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7 (IC = 100 mA, VCE = 5.0 V) (Note 1) − 0.83 −
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product fT MHz (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) − 100 − (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 150 200 − Common Base Output Capacitance Cob − − 5.0 pF (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance Cib − 8.0 − pF (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small−Signal Current Gain hfe − (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182 125 − 500 BC182A 125 − 260 BC182B 240 − 500 Noise Figure NF dB (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz) − 2.0 10 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
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