Datasheet BUK455-60A, BUK455-60B (Philips) - 3

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B PD% Normalised Power Derating Zth j-mb / (K/W) BUKx55-lv 120 10 110 100 D = 90 1 80 0.5 70 0.2 60 0.1 0.1 0.05 50 0.02 40 30 0.01 tp 0 P tp D D = T 20 10 T t 0 0.001 0 20 40 60 80 100 120 140 160 180 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / s Fig.1. Normalised power dissipation. Fig.4. Transient thermal impedance. PD% = 100⋅P /P = f(T ) Z = f(t); parameter D = t /T D D 25 ˚C mb th j-mb p ID% Normalised Current Derating ID / A BUK455-50A 120 80 20 110 10 VGS / V = 70 15 100 8 90 60 80 50 70 7 60 40 50 30 40 6 30 20 20 5 10 10 4 0 0 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 Tmb / C VDS / V Fig.2. Normalised continuous drain current. Fig.5. Typical output characteristics, T = 25 ˚C. j ID% = 100⋅I /I = f(T ); conditions: V ≥ 10 V I = f(V ); parameter V D D 25 ˚C mb GS D DS GS ID / A BUK455-60 RDS(ON) / Ohm BUK455-50A 1000 0.20 4.5 5 5.5 6 6.5 7 7.5 A 0.15 8 B 100 tp = 10 us RDS(ON) = VDS/ID 100 us 0.10 1 ms 10 DC 10 ms 0.05 10 100 ms VGS / V = 20 1 0 1 10 100 0 20 40 60 80 VDS / V ID / A Fig.3. Safe operating area. T = 25 ˚C Fig.6. Typical on-state resistance, T = 25 ˚C. mb j I & I = f(V ); I single pulse; parameter t R = f(I ); parameter V D DM DS DM p DS(ON) D GS April 1993 3 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS